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BUB931T

ST Microelectronics

HIGH VOLTAGE IGNITION COIL DRIVER NPN POWER DARLINGTONS

® BU931T BUB931T HIGH VOLTAGE IGNITION COIL DRIVER NPN POWER DARLINGTONS s s s s VERY RUGGED BIPOLAR TECHNOLOGY HIGH...


ST Microelectronics

BUB931T

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® BU931T BUB931T HIGH VOLTAGE IGNITION COIL DRIVER NPN POWER DARLINGTONS s s s s VERY RUGGED BIPOLAR TECHNOLOGY HIGH OPERATING JUNCTION TEMPERATURE WIDE RANGE OF PACKAGES SURFACE-MOUNTING D2PAK (TO-263) POWER PACKAGE IN TUBE (NO SUFFIX) OR IN TAPE & REEL (SUFFIX ”T4”) 2 3 1 3 APPLICATIONS s HIGH RUGGEDNESS ELECTRONIC IGNITIONS 1 TO-220 D2PAK TO-263 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V CES V CEO V EBO IC I CM IB I BM P t ot T stg Tj Parameter Collector-Emitter Voltage (VBE = 0) Collector-Emitter Voltage (IB = 0) Emitter-Base Voltage (IC = 0) Collector Current Collector Peak Current Base Current Base Peak Current Total Dissipation at Tc = 25 C Storage T emperature Max. O perating Junction Temperature o Value 500 400 5 10 15 1 5 125 -65 to 175 175 Uni t V V V A A A A W o o C C 1/7 January 1999 BU931T / BUB931T THERMAL DATA R t hj-ca se Thermal Resistance Junction-case Max 1.2 o C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symb ol I CES I CEO I EBO Parameter Collector Cut-off Current (V BE = 0) Collector Cut-off Current (I B = 0) Emitter Cut-off Current (I C = 0) Test Cond ition s V CE = 500 V V CE = 500 V V CE = 450 V V CE = 450 V V EB = 5 V I C = 100 mA L = 10 mH I B = 0 V c la mp = RATED V CEO (See fig.4) IC = 7 A IC = 8 A IC = 7 A IC = 8 A IC = 5 A I B = 70 mA I B = 100 mA I B = 70 mA I B = 100 mA V CE = 10 V 300 2.5 8 V A 400 1.6 1.8 2.2 2.4 Tj = 125 C Tj = 125 C o o Min. Typ . Max. 100 0.5 100 0.5 20 ...




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