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BU508DF

Silicon Diffused Power Transistor

Description

Philips Semiconductors Product specification Silicon Diffused Power Transistor BU508DF GENERAL DESCRIPTION High voltage, high-speed switching npn transistors in a fully isolated SOT199 envelope with integrated efficiency diode, primarily for use in horizontal deflection circuits of colour television receivers. QUICK REFERENCE DATA SYMBOL VCESM VCEO IC I...

NXP

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