Philips Semiconductors
Object specification
Silicon Diffused Power Transistor
BU4530AW
GENERAL DESCRIPTION
Enhanced ...
Philips Semiconductors
Object specification
Silicon Diffused Power
Transistor
BU4530AW
GENERAL DESCRIPTION
Enhanced performance, new generation, high-voltage, high-speed switching
npn transistor in a plastic envelope intended for use in horizontal deflection circuits of colour television receivers and p.c monitors. Features exceptional tolerance to base drive and collector current load variations resulting in a very low worst case dissipation.
QUICK REFERENCE DATA
SYMBOL VCESM VCEO IC ICM Ptot VCEsat ICsat tf PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation voltage Collector saturation current Fall time CONDITIONS VBE = 0 TYP. 10 8 t.b.f t.b.f MAX. 1500 800 16 40 125 3.0 t.b.f t.b.f UNIT V V A A W V A A µs µs
Tmb ≤ 25 ˚C IC = 10.0 A; IB = 2.5 A f = 32 kHz f = 90 kHz ICsat = 10.0 A; f = 32 kHz ICsat = 8 A; f = 90 kHz
PINNING - SOT429
PIN 1 2 3 tab base collector emitter collector DESCRIPTION
PIN CONFIGURATION
SYMBOL
c b
1 2 3
e
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134) SYMBOL VCESM VCEO IC ICM IB IBM -IBM Ptot Tstg Tj PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Base current (DC) Base current peak value Reverse base current peak value 1 Total power dissipation Storage temperature Jun...