Philips Semiconductors
Objective specification
Silicon Diffused Power Transistor
BU4525DW
GENERAL DESCRIPTION
Enhanc...
Philips Semiconductors
Objective specification
Silicon Diffused Power
Transistor
BU4525DW
GENERAL DESCRIPTION
Enhanced performance, new generation, high-voltage, high-speed switching
npn transistor in a plastic envelope with an integrated damper diode intended for use in horizontal deflection circuits of colour television receivers and p.c monitors. Features exceptional tolerance to base drive and collector current load variations resulting in a very low worst case dissipation.
QUICK REFERENCE DATA
SYMBOL VCESM VCEO IC ICM Ptot VCEsat ICsat VF tf PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation voltage Collector saturation current Diode forward voltage Fall time CONDITIONS VBE = 0 V TYP. 9.0 t.b.f 0.4 t.b.f MAX. 1500 800 14 30 125 3.0 2.2 0.55 t.b.f UNIT V V A A W V A A V µs µs
Ths ≤ 25 ˚C IC = 9.0 A; IB = 2.25 A f = 16 kHz f = 70 kHz IF = 9.0 A ICsat = 9.0 A;f = 16 kHz f = 70 kHz
PINNING - SOT429
PIN 1 2 3 tab base collector emitter collector DESCRIPTION
PIN CONFIGURATION
SYMBOL
c b
Rbe
1
2
3
e
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134) SYMBOL VCESM VCEO IC ICM IB IBM -IBM Ptot Tstg Tj PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Base current (DC) Base current peak value Reverse ...