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BU4523AX Dataheets PDF



Part Number BU4523AX
Manufacturers NXP
Logo NXP
Description Silicon Diffused Power Transistor
Datasheet BU4523AX DatasheetBU4523AX Datasheet (PDF)

Philips Semiconductors Product specification Silicon Diffused Power Transistor BU4523AX GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic envelope intended for use in horizontal deflection circuits of colour television receivers and p.c monitors. Features exceptional tolerance to base drive and collector current load variations resulting in a very low worst case dissipation. QUICK REFERENCE DATA SYMBOL VCESM VCEO IC ICM .

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Philips Semiconductors Product specification Silicon Diffused Power Transistor BU4523AX GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic envelope intended for use in horizontal deflection circuits of colour television receivers and p.c monitors. Features exceptional tolerance to base drive and collector current load variations resulting in a very low worst case dissipation. QUICK REFERENCE DATA SYMBOL VCESM VCEO IC ICM Ptot VCEsat ICsat tf PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation voltage Collector saturation current Fall time CONDITIONS VBE = 0 V TYP. 8 6.5 0.3 0.14 MAX. 1500 800 11 29 45 3.0 0.4 UNIT V V A A W V A A µs µs Ths ≤ 25 ˚C IC = 8 A; IB = 2 A f = 16 kHz f = 70 kHz ICsat = 8 A; f = 16 kHz ICsat = 6.5 A; f = 70 kHz PINNING - SOT399 PIN 1 2 3 base collector emitter DESCRIPTION PIN CONFIGURATION case SYMBOL c b 1 2 3 case isolated e LIMITING VALUES Limiting values in accordance with the Absolute Maximum Rating System (IEC 134) SYMBOL VCESM VCEO IC ICM IB IBM -IBM Ptot Tstg Tj PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Base current (DC) Base current peak value Reverse base current peak value 1 Total power dissipation Storage temperature Junction temperature CONDITIONS VBE = 0 V MIN. -55 MAX. 1500 800 11 29 7 10 7 45 150 150 UNIT V V A A A A A W ˚C ˚C Ths ≤ 25 ˚C THERMAL RESISTANCES SYMBOL Rth j-hs Rth j-a PARAMETER Junction to heatsink Junction to ambient CONDITIONS with heatsink compound in free air TYP. 35 MAX. 2.8 UNIT K/W K/W 1 Turn-off current. May 1998 1 Rev 1.100 Philips Semiconductors Product specification Silicon Diffused Power Transistor BU4523AX ISOLATION LIMITING VALUE & CHARACTERISTIC Ths = 25 ˚C unless otherwise specified SYMBOL Visol PARAMETER Repetitive peak voltage from all three terminals to external heatsink CONDITIONS R.H. ≤ 65 % ; clean and dustfree MIN. TYP. MAX. 2500 UNIT V Cisol Capacitance from T2 to external f = 1 MHz heatsink - 22 - pF STATIC CHARACTERISTICS Ths = 25 ˚C unless otherwise specified SYMBOL ICES ICES IEBO BVEBO VCEOsust VCEsat VBEsat hFE hFE PARAMETER Collector cut-off current 2 CONDITIONS VBE = 0 V; VCE = VCESMmax VBE = 0 V; VCE = VCESMmax; Tj = 125 ˚C VEB = 6 V; IC = 0 A IB = 1 mA IB = 0 A; IC = 100 mA; L = 25 mH IC = 8 A; IB = 2 A IC = 8 A; IB = 2 A IC = 1 A; VCE = 5 V IC = 8 A; VCE = 5 V MIN. 7.5 800 0.85 4.2 TYP. 12.5 0.95 14 5.8 MAX. 1.0 2.0 100 3.0 1.1 7.3 UNIT mA mA µA V V V V Emitter cut-off current Emitter-base breakdown voltage Collector-emitter sustaining voltage Collector-emitter saturation voltage Base-emitter saturation voltage DC current gain DYNAMIC CHARACTERISTICS Ths = 25 ˚C unless otherwise specified SYMBOL PARAMETER Switching times (1.


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