Document
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU4523AX
GENERAL DESCRIPTION
Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic envelope intended for use in horizontal deflection circuits of colour television receivers and p.c monitors. Features exceptional tolerance to base drive and collector current load variations resulting in a very low worst case dissipation.
QUICK REFERENCE DATA
SYMBOL VCESM VCEO IC ICM Ptot VCEsat ICsat tf PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation voltage Collector saturation current Fall time CONDITIONS VBE = 0 V TYP. 8 6.5 0.3 0.14 MAX. 1500 800 11 29 45 3.0 0.4 UNIT V V A A W V A A µs µs
Ths ≤ 25 ˚C IC = 8 A; IB = 2 A f = 16 kHz f = 70 kHz ICsat = 8 A; f = 16 kHz ICsat = 6.5 A; f = 70 kHz
PINNING - SOT399
PIN 1 2 3 base collector emitter DESCRIPTION
PIN CONFIGURATION
case
SYMBOL
c b
1 2 3
case isolated
e
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134) SYMBOL VCESM VCEO IC ICM IB IBM -IBM Ptot Tstg Tj PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Base current (DC) Base current peak value Reverse base current peak value 1 Total power dissipation Storage temperature Junction temperature CONDITIONS VBE = 0 V MIN. -55 MAX. 1500 800 11 29 7 10 7 45 150 150 UNIT V V A A A A A W ˚C ˚C
Ths ≤ 25 ˚C
THERMAL RESISTANCES
SYMBOL Rth j-hs Rth j-a PARAMETER Junction to heatsink Junction to ambient CONDITIONS with heatsink compound in free air TYP. 35 MAX. 2.8 UNIT K/W K/W
1 Turn-off current.
May 1998
1
Rev 1.100
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU4523AX
ISOLATION LIMITING VALUE & CHARACTERISTIC
Ths = 25 ˚C unless otherwise specified SYMBOL Visol PARAMETER Repetitive peak voltage from all three terminals to external heatsink CONDITIONS R.H. ≤ 65 % ; clean and dustfree MIN. TYP. MAX. 2500 UNIT V
Cisol
Capacitance from T2 to external f = 1 MHz heatsink
-
22
-
pF
STATIC CHARACTERISTICS
Ths = 25 ˚C unless otherwise specified SYMBOL ICES ICES IEBO BVEBO VCEOsust VCEsat VBEsat hFE hFE PARAMETER Collector cut-off current
2
CONDITIONS VBE = 0 V; VCE = VCESMmax VBE = 0 V; VCE = VCESMmax; Tj = 125 ˚C VEB = 6 V; IC = 0 A IB = 1 mA IB = 0 A; IC = 100 mA; L = 25 mH IC = 8 A; IB = 2 A IC = 8 A; IB = 2 A IC = 1 A; VCE = 5 V IC = 8 A; VCE = 5 V
MIN. 7.5 800 0.85 4.2
TYP. 12.5 0.95 14 5.8
MAX. 1.0 2.0 100 3.0 1.1 7.3
UNIT mA mA µA V V V V
Emitter cut-off current Emitter-base breakdown voltage Collector-emitter sustaining voltage Collector-emitter saturation voltage Base-emitter saturation voltage DC current gain
DYNAMIC CHARACTERISTICS
Ths = 25 ˚C unless otherwise specified SYMBOL PARAMETER Switching times (1.