Document
Philips Semiconductors
Objective specification
Silicon Diffused Power Transistor
BU4522DF
GENERAL DESCRIPTION
Enhanced performance, new generation, high-voltage, high-speed switching npn transistor with an integrated damper diode in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television receivers and p.c monitors. Features exceptional tolerance to base drive and collector current load variations resulting in a very low worst case dissipation.
QUICK REFERENCE DATA
SYMBOL VCESM VCEO IC ICM Ptot VCEsat ICsat VF tf PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation voltage Collector saturation current (Fig 17) Diode forward voltage Fall time CONDITIONS VBE = 0 V TYP. 7 6 285 t.b.f MAX. 1500 800 10 25 45 3.0 2.2 400 t.b.f UNIT V V A A W V A A V ns ns
Ths ≤ 25 ˚C IC = 7 A; IB = 1.75 A f = 16 kHz f = 64 kHz IF = 7.0 A ICsat = 7 A; f = 16 kHz f = 64 kHz
PINNING - SOT199
PIN 1 2 3 base collector emitter DESCRIPTION
PIN CONFIGURATION
case
SYMBOL
c b
Rbe
case isolated
1
2
3
e
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134) SYMBOL VCESM VCEO IC ICM IB IBM -IBM Ptot Tstg Tj PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Base current (DC) Base current peak value Reverse base current peak value 1 Total power dissipation Storage temperature Junction temperature CONDITIONS VBE = 0 V MIN. -55 MAX. 1500 800 10 25 6 9 6 45 150 150 UNIT V V A A A A A W ˚C ˚C
Ths ≤ 25 ˚C
1 Turn-off current.
July 1998
1
Rev 1.000
Philips Semiconductors
Objective specification
Silicon Diffused Power Transistor
BU4522DF
THERMAL RESISTANCES
SYMBOL Rth j-hs Rth j-a PARAMETER Junction to heatsink Junction to ambient CONDITIONS with heatsink compound in free air TYP. 35 MAX. 2.8 UNIT K/W K/W
ISOLATION LIMITING VALUE & CHARACTERISTIC
Ths = 25 ˚C unless otherwise specified SYMBOL Visol PARAMETER Repetitive peak voltage from all three terminals to external heatsink CONDITIONS R.H. ≤ 65 % ; clean and dustfree MIN. TYP. MAX. 2500 UNIT V
Cisol
Capacitance from T2 to external f = 1 MHz heatsink
-
22
-
pF
STATIC CHARACTERISTICS
Ths = 25 ˚C unless otherwise specified SYMBOL ICES ICES BVEBO Rbe VCEOsust VCEsat VBEsat hFE hFE VF PARAMETER Collector cut-off current
2
CONDITIONS VBE = 0 V; VCE = VCESMmax VBE = 0 V; VCE = VCESMmax; Tj = 125 ˚C IB = 600 mA VEB = 7.5 V IB = 0 A; IC = 100 mA; L = 25 mH IC = 7 A; IB = 1.75 A IC = 7 A; IB = 1.75 A IC = 1 A; VCE = 5 V IC = 7 A; VCE = 5 V IF = 7 A
MIN. 7.5 800 0.85 4.2 -
TYP. 13.5 50 0.94 10 5.8 -
MAX. 1.0 2.0 3.0 1.03 7.3 2.2
UNIT mA mA V Ω V V V V
Emitter-base breakdown voltage Base-emitter resistance Collector-emitter sustaining voltage Collector-emitter saturation voltage Base-emitter saturation voltag.