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BU4522DF Dataheets PDF



Part Number BU4522DF
Manufacturers NXP
Logo NXP
Description Silicon Diffused Power Transistor
Datasheet BU4522DF DatasheetBU4522DF Datasheet (PDF)

Philips Semiconductors Objective specification Silicon Diffused Power Transistor BU4522DF GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor with an integrated damper diode in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television receivers and p.c monitors. Features exceptional tolerance to base drive and collector current load variations resulting in a very low worst case dissipation. QU.

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Philips Semiconductors Objective specification Silicon Diffused Power Transistor BU4522DF GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor with an integrated damper diode in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television receivers and p.c monitors. Features exceptional tolerance to base drive and collector current load variations resulting in a very low worst case dissipation. QUICK REFERENCE DATA SYMBOL VCESM VCEO IC ICM Ptot VCEsat ICsat VF tf PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation voltage Collector saturation current (Fig 17) Diode forward voltage Fall time CONDITIONS VBE = 0 V TYP. 7 6 285 t.b.f MAX. 1500 800 10 25 45 3.0 2.2 400 t.b.f UNIT V V A A W V A A V ns ns Ths ≤ 25 ˚C IC = 7 A; IB = 1.75 A f = 16 kHz f = 64 kHz IF = 7.0 A ICsat = 7 A; f = 16 kHz f = 64 kHz PINNING - SOT199 PIN 1 2 3 base collector emitter DESCRIPTION PIN CONFIGURATION case SYMBOL c b Rbe case isolated 1 2 3 e LIMITING VALUES Limiting values in accordance with the Absolute Maximum Rating System (IEC 134) SYMBOL VCESM VCEO IC ICM IB IBM -IBM Ptot Tstg Tj PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Base current (DC) Base current peak value Reverse base current peak value 1 Total power dissipation Storage temperature Junction temperature CONDITIONS VBE = 0 V MIN. -55 MAX. 1500 800 10 25 6 9 6 45 150 150 UNIT V V A A A A A W ˚C ˚C Ths ≤ 25 ˚C 1 Turn-off current. July 1998 1 Rev 1.000 Philips Semiconductors Objective specification Silicon Diffused Power Transistor BU4522DF THERMAL RESISTANCES SYMBOL Rth j-hs Rth j-a PARAMETER Junction to heatsink Junction to ambient CONDITIONS with heatsink compound in free air TYP. 35 MAX. 2.8 UNIT K/W K/W ISOLATION LIMITING VALUE & CHARACTERISTIC Ths = 25 ˚C unless otherwise specified SYMBOL Visol PARAMETER Repetitive peak voltage from all three terminals to external heatsink CONDITIONS R.H. ≤ 65 % ; clean and dustfree MIN. TYP. MAX. 2500 UNIT V Cisol Capacitance from T2 to external f = 1 MHz heatsink - 22 - pF STATIC CHARACTERISTICS Ths = 25 ˚C unless otherwise specified SYMBOL ICES ICES BVEBO Rbe VCEOsust VCEsat VBEsat hFE hFE VF PARAMETER Collector cut-off current 2 CONDITIONS VBE = 0 V; VCE = VCESMmax VBE = 0 V; VCE = VCESMmax; Tj = 125 ˚C IB = 600 mA VEB = 7.5 V IB = 0 A; IC = 100 mA; L = 25 mH IC = 7 A; IB = 1.75 A IC = 7 A; IB = 1.75 A IC = 1 A; VCE = 5 V IC = 7 A; VCE = 5 V IF = 7 A MIN. 7.5 800 0.85 4.2 - TYP. 13.5 50 0.94 10 5.8 - MAX. 1.0 2.0 3.0 1.03 7.3 2.2 UNIT mA mA V Ω V V V V Emitter-base breakdown voltage Base-emitter resistance Collector-emitter sustaining voltage Collector-emitter saturation voltage Base-emitter saturation voltag.


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