Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU4522AF
GENERAL DESCRIPTION
New gene...
Philips Semiconductors
Product specification
Silicon Diffused Power
Transistor
BU4522AF
GENERAL DESCRIPTION
New generation, high-voltage, high-speed switching
npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour TV receivers and PC monitors.
QUICK REFERENCE DATA
SYMBOL VCESM VCEO IC ICM Ptot VCEsat ICsat tf PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation voltage Collector saturation current (Fig 17) Fall time CONDITIONS VBE = 0 V TYP. 7 6 285 170 MAX. 1500 800 10 25 45 3.0 400 230 UNIT V V A A W V A A ns ns
Ths ≤ 25 ˚C IC = 7 A; IB = 1.75 A f = 16 kHz f = 64 kHz ICsat = 7 A; f = 16 kHz ICsat = 6 A; f = 64 kHz
PINNING - SOT199
PIN 1 2 3 base collector emitter DESCRIPTION
PIN CONFIGURATION
case
SYMBOL
c b
1 2 3
case isolated
e
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134) SYMBOL VCESM VCEO IC ICM IB IBM -IBM Ptot Tstg Tj PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Base current (DC) Base current peak value Reverse base current peak value 1 Total power dissipation Storage temperature Junction temperature CONDITIONS VBE = 0 V MIN. -55 MAX. 1500 800 10 25 6 9 6 45 150 150 UNIT V V A A A A A W ˚C ˚C
Ths ≤ 25 ˚C
THERMAL RESISTANCES
SYM...