BU408

BU406/406H/408 BU406/406H/408 High Voltage Switching Use In Horizontal Deflection Output Stage 1 TO-220 2.Collector 3.Emitter 1.Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC ICP IB PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature Value 400 200 6 7 10 4 60 150 - 55 ~ 150 Units V V V A A A W °C °C Electrical Characteristics TC=25°C unless otherwise noted Symbol ICES Parameter Collector Cut-off Current Test Condition VCE = 400V, VBE = 0 VCE = 250V, VBE = 0 VCE = 250V, VBE = 0 @ TC=150°C VBE = 6V, IC = 0 IC = 5A, IB = 0.5A IC = 5A, IB = 0.8A IC = 6A, IB = 1.2A IC = 5A, IB = 0.5A IC = 5A, IB = 0.5A IC = 6A, IB = 1.2A VCE = 10V, IC = 0.5A IC = 5A, IB = 0.5A IC = 5A, IB = 0.8A IC = 6A, IB = 1.2A 10 0.75 0.4 0.4 Min. Max. 5 100 1 1 1 1 1 1.2 1.2 1.5 Units mA µA mA mA V V V V V V MHz µs µs µs IEBO VCE(sat) Emitter Cut-off Current Collector-Emitter Saturation Voltage : BU406 : BU406H : BU408 Base-Emitter Saturation Voltage : BU406 : BU406H : BU408 Current Gain Bandwidth Product Turn OFF Time : BU406 : BU406H : BU408 VBE(sat) fT tOFF ©2000 Fairchild Semiconductor International Rev. A, February 2000 BU406/406H/408 Typical Characteristics 5 IB = 2 00m A IB = mA 180 60mA IB = 1 1000 IC[A], COLLECTOR CURRENT 4 A IB = 140m A IB = 1...