BU406

BU406 — NPN Epitaxial Silicon Transistor September 2013 BU406 NPN Epitaxial Silicon Transistor Features High-Voltage Capability High Switching Speed Low Saturation Voltage Applications Horizontal deflection for TV and CRT Description The BU406 is a 400 V 7 A Silicon Epitaxial Planar NPN Transistor. The BU406 is designed for high speed switching applications which utilizes the industry standard TO-220 package offering flexibility in design and excellent Power Dissipation. 1 TO-220 1.Base 2.Collector 3.Emitter Ordering Information Part Number BU406 BU406TU Marking BU406 BU406 Package TO-220 3L Packing Method Rail Absolute Maximum Ratings Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at TC = 25°C unless otherwise noted. Symbol Parameter Value Units VCBO VCEO VEBO IC ICP IB PC TJ TSTG Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature 400 200 6 7 10 4 60 150 - 55 to 150 V V V A A A W °C °C © 2000 Fairchild Semiconductor Corporation BU406 Rev. 1.2.1 1 www.fairchil...