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BU406

ST Microelectronics

SILICON NPN SWITCHING TRANSISTOR

BU406 SILICON NPN SWITCHING TRANSISTOR s s s SGS-THOMSON PREFERRED SALESTYPE NPN TRANSISTOR VERY HIGH SWITCHING SPEED ...


ST Microelectronics

BU406

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BU406 SILICON NPN SWITCHING TRANSISTOR s s s SGS-THOMSON PREFERRED SALESTYPE NPN TRANSISTOR VERY HIGH SWITCHING SPEED s APPLICATIONS: HORIZONTAL DEFLECTION FOR MONOCHROME TV 1 2 3 DESCRIPTION The BU406 is a silicon epitaxial planar NPN transistor in Jedec TO-220 plastic package. It is a fast switching device for use in horizontal deflection output stages of large screens MTV receivers with 110o CRT. TO-220 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V CBO V CEV V CEO V EBO IC I CM I CM IB P tot T stg Tj June 1997 Parameter Collector-Base Voltage (I E = 0) Collector-Emitter Voltage (V BE = -1.5 V) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Collector Current Collector Peak Current (repetitive) Collector Peak Current (t p = 10 ms) Base Current Total Dissipation at T c ≤ 25 o C Storage Temperature Max. Operating Junction Temperature Value 400 400 200 6 7 10 15 4 60 -65 to 150 150 Unit V V V V A A A A W o C o C 1/4 BU406 THERMAL DATA R thj-case R thj-amb Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max Max 2.08 70 o o C/W C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol I CES Parameter Collector Cut-off Current (V BE = 0) Emitter Cut-off Current (I C = 0) Collector-emitter Saturation Voltage Base-emitter Saturation Voltage Transition-Frequency Turn-off Time Second Breakdown Collector Current Test Conditions V CE =400 V V CE =250 V V CE =250 V V EB = 6 V IC = 5 A IC = 5 A I C =...




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