Document
Philips Semiconductors
Preliminary specification
Silicon Diffused Power Transistor
BU2727A
GENERAL DESCRIPTION
High voltage, high-speed switching npn transistor in a plastic envelope intended for use in horizontal deflection circuits of high resolution monitors, suitable for operation up to 64 kHz. Designed to withstand VCES pulses up to 1700V.
QUICK REFERENCE DATA
SYMBOL VCESM VCEO IC ICM Ptot VCEsat ICsat ts PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation voltage Collector saturation current Storage time CONDITIONS VBE = 0 V TYP. 5.0 2.2 MAX. 1700 825 12 30 125 1.0 tbf UNIT V V A A W V A µs
Tmb ≤ 25 ˚C IC = 5.0 A; IB = 0.91 A ICM = 5.0 A; IB(end) = 0.9 A
PINNING - SOT93
PIN 1 2 3 tab base collector emitter collector DESCRIPTION
PIN CONFIGURATION
tab
SYMBOL
c b
1
2
3
e
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134) SYMBOL VCESM VCEO IC ICM IB IBM -IB(AV) -IBM Ptot Tstg Tj PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Base current (DC) Base current peak value Reverse base current Reverse base current peak value 1 Total power dissipation Storage temperature Junction temperature CONDITIONS VBE = 0 V MIN. -65 MAX. 1700 825 12 30 12 25 200 25 125 150 150 UNIT V V A A A A mA A W ˚C ˚C
average over any 20 ms period Tmb ≤ 25 ˚C
ESD LIMITING VALUES
SYMBOL VC PARAMETER CONDITIONS MIN. MAX. 10 UNIT kV Electrostatic discharge capacitor voltage Human body model (250 pF, 1.5 kΩ)
1 Turn-off current.
September 1997
1
Rev 1.100
Philips Semiconductors
Preliminary specification
Silicon Diffused Power Transistor
BU2727A
THERMAL RESISTANCES
SYMBOL Rth j-mb Rth j-a PARAMETER Junction to mounting base Junction to ambient CONDITIONS in free air TYP. 45 MAX. 1.0 UNIT K/W K/W
STATIC CHARACTERISTICS
Tmb = 25 ˚C unless otherwise specified SYMBOL ICES ICES IEBO BVEBO VCEOsust VCEsat VBEsat hFE hFE PARAMETER Collector cut-off current 2 Emitter cut-off current Emitter-base breakdown voltage Collector-emitter sustaining voltage Collector-emitter saturation voltage Base-emitter saturation voltage DC current gain CONDITIONS VBE = 0 V; VCE = VCESMmax VBE = 0 V; VCE = VCESMmax; Tj = 125 ˚C VEB = 7.5 V; IC = 0 A IB = 1 mA IB = 0 A; IC = 100 mA; L = 25 mH IC = 5.0 A; IB = 0.91 A IC = 5.0 A; IB = 0.91 A IC = 0.1 A; VCE = 5 V IC = 5 A; VCE = 1 V MIN. 7.5 825 0.78 12 5.5 TYP. 13.5 0.86 22 8 MAX. 1.0 2.0 1.0 1.0 0.95 35 11 UNIT mA mA mA V V V V
DYNAMIC CHARACTERISTICS
Tmb = 25 ˚C unless otherwise specified SYMBOL PARAMETER Switching times (64 kHz line deflection circuit) ts tf Turn-off storage time Turn-off fall time CONDITIONS ICM = 5.0 A; LC = 260 µH; Cfb = 4.8 nF; VCC = 180 V; IB(end) = 0.9 A; LB = 0.6 µH; -VBB = 2 V; (-dIB/dt = 3.33 A/µs) TYP. MAX. UNIT
2.2 tbf
tbf tbf
µs µs
IC / mA
+ 50v 100-200R
250
Horizontal Oscilloscope Vertical 100R 6V 30-60 Hz 1R
200
100
0 VCE / V
min VCEOsust
Fig.1. Test circuit for VCEOsust.
Fig.2. Oscilloscope display for VCEOsust.
2 Measured with half sine-wave voltage (curve tracer).
September 1997
2
Rev 1.100
Philips Semiconductors
Preliminary specification
Silicon Diffused Power Transistor
BU2727A
TRANSISTOR IC DIODE
ICsat
+ 150 v nominal adjust for ICsat
t
Lc
IB I B end t 5 us 6.5 us 16 us VCE t
IBend
LB
T.U.T. Cfb
-VBB
Fig.3. Switching times waveforms (64 kHz).
Fig.5. Switching times test circuit.
ICsat 90 % IC
100
hFE VCE = 5 V
BU2727A/AF Tmb = 25 C Tmb = 85 C
10 % tf ts IB IBend
t
10
t
1 0.01 0.1 1 10 IC / A 100
- IBM
Fig.4. Switching times definitions.
Fig.6. DC current gain. hFE = f (IC) Parameter Tmb (Low and high gain)
September 1997
3
Rev 1.100
Philips Semiconductors
Preliminary specification
Silicon Diffused Power Transistor
BU2727A
hFE 100 VCE = 1 V
BU2727A/AF Tmb = 25 C Tmb = 85 C
120 110 100 90 80 70 60 50 40 30 20 10
PD%
Normalised Power Derating
10
1 0.01
0
0.1 1 10 IC / A 100
0
20
40
60
80 100 Tmb / C
120
140
Fig.7. DC current gain. hFE = f (IC) Parameter Tmb (Low and high gain)
Fig.10. Normalised power dissipation. PD% = 100⋅PD/PD 25˚C = f (Tmb)
VCEsat / V
BU2727A/AF
10
Tmb = 85 C Tmb = 25 C
10
Zth / (K/W)
BU2525A
1 0.5
1
0.1
IC/IB = 12 IC/IB = 5
0.2 0.1 0.05 0.02
P D tp D= tp T t
0.1
0.01 D=0 0.001 1E-06
T
0.01 0.1
1
10
IC / A
100
1E-04
1E-02 t/s
1E+00
Fig.8. Typical collector-emitter saturation voltage. VCEsat = f (IC); parameter IC/IB
Fig.11. Transient thermal impedance. Zth j-mb = f(t); parameter D = tp/T
VBEsat / V 1 IC = 6 A
BU2727A/AF
0.9
0.8
0.7
4A
Tmb = 85 C Tmb = 25 C
0.6
0
1
2
3
IB / A
4
Fig.9. Typical base-emitter saturation voltage. VBEsat = f (IB); parameter IC
September 1997
4
Rev 1.100
Philips Semiconductors
Preliminary specification
Silicon Diffused Power Transistor
BU.