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BU2727A Dataheets PDF



Part Number BU2727A
Manufacturers NXP
Logo NXP
Description Silicon Diffused Power Transistor
Datasheet BU2727A DatasheetBU2727A Datasheet (PDF)

Philips Semiconductors Preliminary specification Silicon Diffused Power Transistor BU2727A GENERAL DESCRIPTION High voltage, high-speed switching npn transistor in a plastic envelope intended for use in horizontal deflection circuits of high resolution monitors, suitable for operation up to 64 kHz. Designed to withstand VCES pulses up to 1700V. QUICK REFERENCE DATA SYMBOL VCESM VCEO IC ICM Ptot VCEsat ICsat ts PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open ba.

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Philips Semiconductors Preliminary specification Silicon Diffused Power Transistor BU2727A GENERAL DESCRIPTION High voltage, high-speed switching npn transistor in a plastic envelope intended for use in horizontal deflection circuits of high resolution monitors, suitable for operation up to 64 kHz. Designed to withstand VCES pulses up to 1700V. QUICK REFERENCE DATA SYMBOL VCESM VCEO IC ICM Ptot VCEsat ICsat ts PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation voltage Collector saturation current Storage time CONDITIONS VBE = 0 V TYP. 5.0 2.2 MAX. 1700 825 12 30 125 1.0 tbf UNIT V V A A W V A µs Tmb ≤ 25 ˚C IC = 5.0 A; IB = 0.91 A ICM = 5.0 A; IB(end) = 0.9 A PINNING - SOT93 PIN 1 2 3 tab base collector emitter collector DESCRIPTION PIN CONFIGURATION tab SYMBOL c b 1 2 3 e LIMITING VALUES Limiting values in accordance with the Absolute Maximum Rating System (IEC 134) SYMBOL VCESM VCEO IC ICM IB IBM -IB(AV) -IBM Ptot Tstg Tj PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Base current (DC) Base current peak value Reverse base current Reverse base current peak value 1 Total power dissipation Storage temperature Junction temperature CONDITIONS VBE = 0 V MIN. -65 MAX. 1700 825 12 30 12 25 200 25 125 150 150 UNIT V V A A A A mA A W ˚C ˚C average over any 20 ms period Tmb ≤ 25 ˚C ESD LIMITING VALUES SYMBOL VC PARAMETER CONDITIONS MIN. MAX. 10 UNIT kV Electrostatic discharge capacitor voltage Human body model (250 pF, 1.5 kΩ) 1 Turn-off current. September 1997 1 Rev 1.100 Philips Semiconductors Preliminary specification Silicon Diffused Power Transistor BU2727A THERMAL RESISTANCES SYMBOL Rth j-mb Rth j-a PARAMETER Junction to mounting base Junction to ambient CONDITIONS in free air TYP. 45 MAX. 1.0 UNIT K/W K/W STATIC CHARACTERISTICS Tmb = 25 ˚C unless otherwise specified SYMBOL ICES ICES IEBO BVEBO VCEOsust VCEsat VBEsat hFE hFE PARAMETER Collector cut-off current 2 Emitter cut-off current Emitter-base breakdown voltage Collector-emitter sustaining voltage Collector-emitter saturation voltage Base-emitter saturation voltage DC current gain CONDITIONS VBE = 0 V; VCE = VCESMmax VBE = 0 V; VCE = VCESMmax; Tj = 125 ˚C VEB = 7.5 V; IC = 0 A IB = 1 mA IB = 0 A; IC = 100 mA; L = 25 mH IC = 5.0 A; IB = 0.91 A IC = 5.0 A; IB = 0.91 A IC = 0.1 A; VCE = 5 V IC = 5 A; VCE = 1 V MIN. 7.5 825 0.78 12 5.5 TYP. 13.5 0.86 22 8 MAX. 1.0 2.0 1.0 1.0 0.95 35 11 UNIT mA mA mA V V V V DYNAMIC CHARACTERISTICS Tmb = 25 ˚C unless otherwise specified SYMBOL PARAMETER Switching times (64 kHz line deflection circuit) ts tf Turn-off storage time Turn-off fall time CONDITIONS ICM = 5.0 A; LC = 260 µH; Cfb = 4.8 nF; VCC = 180 V; IB(end) = 0.9 A; LB = 0.6 µH; -VBB = 2 V; (-dIB/dt = 3.33 A/µs) TYP. MAX. UNIT 2.2 tbf tbf tbf µs µs IC / mA + 50v 100-200R 250 Horizontal Oscilloscope Vertical 100R 6V 30-60 Hz 1R 200 100 0 VCE / V min VCEOsust Fig.1. Test circuit for VCEOsust. Fig.2. Oscilloscope display for VCEOsust. 2 Measured with half sine-wave voltage (curve tracer). September 1997 2 Rev 1.100 Philips Semiconductors Preliminary specification Silicon Diffused Power Transistor BU2727A TRANSISTOR IC DIODE ICsat + 150 v nominal adjust for ICsat t Lc IB I B end t 5 us 6.5 us 16 us VCE t IBend LB T.U.T. Cfb -VBB Fig.3. Switching times waveforms (64 kHz). Fig.5. Switching times test circuit. ICsat 90 % IC 100 hFE VCE = 5 V BU2727A/AF Tmb = 25 C Tmb = 85 C 10 % tf ts IB IBend t 10 t 1 0.01 0.1 1 10 IC / A 100 - IBM Fig.4. Switching times definitions. Fig.6. DC current gain. hFE = f (IC) Parameter Tmb (Low and high gain) September 1997 3 Rev 1.100 Philips Semiconductors Preliminary specification Silicon Diffused Power Transistor BU2727A hFE 100 VCE = 1 V BU2727A/AF Tmb = 25 C Tmb = 85 C 120 110 100 90 80 70 60 50 40 30 20 10 PD% Normalised Power Derating 10 1 0.01 0 0.1 1 10 IC / A 100 0 20 40 60 80 100 Tmb / C 120 140 Fig.7. DC current gain. hFE = f (IC) Parameter Tmb (Low and high gain) Fig.10. Normalised power dissipation. PD% = 100⋅PD/PD 25˚C = f (Tmb) VCEsat / V BU2727A/AF 10 Tmb = 85 C Tmb = 25 C 10 Zth / (K/W) BU2525A 1 0.5 1 0.1 IC/IB = 12 IC/IB = 5 0.2 0.1 0.05 0.02 P D tp D= tp T t 0.1 0.01 D=0 0.001 1E-06 T 0.01 0.1 1 10 IC / A 100 1E-04 1E-02 t/s 1E+00 Fig.8. Typical collector-emitter saturation voltage. VCEsat = f (IC); parameter IC/IB Fig.11. Transient thermal impedance. Zth j-mb = f(t); parameter D = tp/T VBEsat / V 1 IC = 6 A BU2727A/AF 0.9 0.8 0.7 4A Tmb = 85 C Tmb = 25 C 0.6 0 1 2 3 IB / A 4 Fig.9. Typical base-emitter saturation voltage. VBEsat = f (IB); parameter IC September 1997 4 Rev 1.100 Philips Semiconductors Preliminary specification Silicon Diffused Power Transistor BU.


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