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BU2525DW

NXP
Part Number BU2525DW
Manufacturer NXP
Description Silicon Diffused Power Transistor
Published Apr 17, 2005
Detailed Description Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2525DW GENERAL DESCRIPTION New gene...
Datasheet PDF File BU2525DW PDF File

BU2525DW
BU2525DW

Overview
Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2525DW GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor with integrated damper diode in a plastic envelope intended for use in horizontal deflection circuits of large screen colour television receivers up to 32 kHz.
QUICK REFERENCE DATA SYMBOL VCESM VCEO IC ICM Ptot VCEsat ICsat ts PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation voltage Collector saturation current Storage time CONDITIONS VBE = 0 TYP.
8 3.
0 MAX.
1500 800 12 30 125 ...


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