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BU2522A

NXP
Part Number BU2522A
Manufacturer NXP
Description Silicon Diffused Power Transistor
Published Apr 17, 2005
Detailed Description Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2522A GENERAL DESCRIPTION New gener...
Datasheet PDF File BU2522A PDF File

BU2522A
BU2522A


Overview
Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2522A GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor in a plastic envelope intended for use in horizontal deflection circuits of high resolution monitors.
Features improved RBSOA performance and is suitable for operation up to 64 kHz.
QUICK REFERENCE DATA SYMBOL VCESM VCEO IC ICM Ptot VCEsat ICsat ts PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation voltage Collector saturation current Storage time CONDITIONS VBE = 0 V TYP.
6.
0 1.
7...



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