Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU2506DX
GENERAL DESCRIPTION
Enhanced...
Philips Semiconductors
Product specification
Silicon Diffused Power
Transistor
BU2506DX
GENERAL DESCRIPTION
Enhanced performance, new generation, high-voltage, high-speed switching
npn transistor with an integrated damper diode in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television receivers. Features exceptional tolerance to base drive and collector current load variations resulting in a very low worst case dissipation.
QUICK REFERENCE DATA
SYMBOL VCESM VCEO IC ICM Ptot VCEsat ICsat VF tf PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation voltage Collector saturation current Diode forward voltage Fall time CONDITIONS VBE = 0 V TYP. 3.0 1.6 0.25 MAX. 1500 700 5 8 45 5 2.0 0.5 UNIT V V A A W V A V µs
Ths ≤ 25 ˚C IC = 3.0 A; IB = 0.79 A IF = 3.0 A ICsat = 3.0 A; IB(end) = 0.67 A
PINNING - SOT399
PIN 1 2 3 base collector emitter DESCRIPTION
PIN CONFIGURATION
case
SYMBOL
c b
Rbe
case isolated
1 2 3
e
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134) SYMBOL VCESM VCEO IC ICM IB IBM -IB(AV) -IBM Ptot Tstg Tj PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Base current (DC) Base current peak value Reverse base current Reverse base current peak value 1 ...