BU208A

BU208A ® BU508A/BU508AFI HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORS s STMicroelectronics PREFERRED SALESTYPES s HIGH VOLTAGE CAPABILITY (> 1500 V) s FULLY INSULATED PACKAGE (U.L. COMPLIANT) FOR EASY MOUNTING APPLICATIONS: s HORIZONTAL DEFLECTION FOR COLOUR TV DESCRIPTION The BU208A, BU508A and BU508AFI are manufactured using Multiepitaxial Mesa technology for cost-effective high performance and use a Hollow Emitter structure to enhance switching speeds. 1 2 TO-3 TO-218 33 22 1 ISOWATT218 1 INTERNAL SCHEMATIC DIAGRAM For TO-3 : C = Tab E = Pin2. ABSOLUTE MAXIMUM RATINGS Symbol VCES VCEO V EBO IC ICM Parameter Collector-Emit ter Volt age (VBE = 0) Collector-Emitter Voltage (IB = 0) Emitt er-Base Voltage (IC = 0) Collector Current Collector Peak Current (tp < 5 ms) Ptot Vi so l Tstg Tj Total Dissipation at Tc = 25 oC Insulation W ithstand Voltage (RMS) from All Three Leads to Exernal Heatsink St orage Temperature Max. Operating Junction Temperature BU208A TO - 3 150 ...