BTW69-1000

BTW 69 (N) SCR . . . . FEATURES HIGH SURGE CAPABILITY HIGH ON-STATE CURRENT HIGH STABILITY AND RELIABILITY BTW 69 Serie : INSULATED VOLTAGE = 2500V(RMS) (UL RECOGNIZED : E81734) DESCRIPTION The BTW 69 (N) Family of Silicon Controlled Rectifiers uses a high performance glass passivated technology. This general purpose Family of Silicon Controlled Rectifiers is designed for power supplies up to 400Hz on resistive or inductive load. ABSOLUTE RATINGS (limiting values) Symbol IT(RMS) IT(AV) ITSM RMS on-state current (180° conduction angle) Average on-state current (180° conduction angle,single phase circuit) Non repetitive surge peak on-state current ( Tj initial = 25°C ) I2 t value Critical rate of rise of on-state current Gate supply : IG = 100 mA diG/dt = 1 A/µs Storage and operating junction temperature range Maximum lead temperature for soldering during 10 s at 4.5 mm from case Parameter BTW 69 BTW 69 N BTW 69 BTW 69 N Tc=70°C Tc=75°C Tc=70°C Tc=75°C tp=8.3 ms tp=10 ms tp=10 ms Value 50 55 32 35 525 500 1250 100 - 40 to + 150 - 40 to + 125 230 A2s A/µs °C °C °C Unit A A A K A G TOP 3 (Plastic) I2t dI/dt Tstg Tj Tl Symbol Parameter BTW 69 200 400 400 BTW 69 / BTW 69 N 600 600 800 800 1000 1000 1200 1200 Unit VDRM VRRM Repetitive peak off-state voltage Tj = 125 °C 200 V March 1995 1/5 BTW 69 (N) THERMAL RESISTANCES Symbol Rth (j-a) Junction to ambient BTW 69 BTW 69 N Parameter Value 50 0.9 0.8 Unit °C/W °C/W Rth (j-c) DC Junction to case for DC GATE CHARACTER...