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BTS917 Dataheets PDF



Part Number BTS917
Manufacturers Infineon Technologies AG
Logo Infineon Technologies AG
Description Smart Lowside Power Switch
Datasheet BTS917 DatasheetBTS917 Datasheet (PDF)

HITFET®BTS 917 Smart Lowside Power Switch Features • Logic Level Input • Input Protection (ESD) • Thermal Shutdown • Overload protection • Short circuit protection • Overvoltage protection • Current limitation • Maximum current adjustable with external resistor • Current sense • Status feedback with external input resistor • Analog driving possible Product Summary Drain source voltage On-state resistance Current limit Nominal load current Clamping energy VDS R DS(on) I D(lim) I D(ISO) EAS 60 .

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HITFET®BTS 917 Smart Lowside Power Switch Features • Logic Level Input • Input Protection (ESD) • Thermal Shutdown • Overload protection • Short circuit protection • Overvoltage protection • Current limitation • Maximum current adjustable with external resistor • Current sense • Status feedback with external input resistor • Analog driving possible Product Summary Drain source voltage On-state resistance Current limit Nominal load current Clamping energy VDS R DS(on) I D(lim) I D(ISO) EAS 60 1.5 3.5 V A A 100 mΩ 1000 mJ Application • All kinds of resistive, inductive and capacitive loads in switching or linear applications • µC compatible power switch for 12 V and 24 V DC applications • Replaces electromechanical relays and discrete circuits N channel vertical power FET in Smart SIPMOS ® chip on chip technology. Fully protected by embedded protected functions. V bb General Description + LOAD NC Drain dv/dt limitation Current limitation Overvoltage protection M 2 3 1 IN 4 CC Overtemperature protection ESD R CC Overload protection Short circuit circuit Short protection protection Source 5 HITFET ® Semiconductor Group Page 1 02.12.1998 BTS 917 Maximum Ratings at Tj = 25 °C unless otherwise specified Parameter Drain source voltage Drain source voltage for short circuit protection RCC = 0 Ω without RCC Continuous input current -0.2V ≤ V IN ≤ 10V 1) Symbol Value 60 15 50 Unit V VDS VDS(SC) I IN no limit | IIN | ≤ 2 mA VIN < -0.2V or VIN > 10V Operating temperature Storage temperature Power dissipation Tj T stg Ptot EAS - 40 ... +150 - 55 ... +150 50 1000 3000 °C W mJ V T C = 25 °C Unclamped single pulse inductive energy I D(ISO) = 3.5 A Electrostatic discharge voltage (Human Body Model) VESD according to MIL STD 883D, method 3015.7 and EOS/ESD assn. standard S5.1 - 1993 Load dump protection V LoadDump2) = V A + VS VIN=low or high; V A=13.5 V t d = 400 ms, RI = 2 Ω, ID=0,5*3.5A t d = 400 ms, RI = 2 Ω, ID= 3.5A DIN humidity category, DIN 40 040 IEC climatic category; DIN IEC 68-1 VLD 75 70 E 40/150/56 V Thermal resistance junction - case: junction - ambient: SMD version, device on PCB: 3) RthJC RthJA RthJA 2.5 75 45 K/W 1A sensor holding current of 500 µA has to be guaranted in the case of thermal shutdown (see also page 3) 2V is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839 Loaddump 3Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm 2 (one layer, 70 µm thick) copper area for Drain connection. PCB is vertical without blown air. Semiconductor Group Page 2 02.12.1998 BTS 917 Electrical Characteristics Parameter at Tj=25°C, unless otherwise specified Characteristics Drain source clamp voltage Symbol min. Values typ. 1.7 30 120 2200 max. 73 5 2.2 60 300 4000 V µA V µA Unit VDS(AZ) I DSS VIN(th) IIN(1) 60 1.3 - T j = - 40 ...+ 150°C, ID = 10 mA Off state drain current VDS = 32 V, T j = -40...+150 °C, V IN = 0 V Input threshold voltage I D = 0,7 mA Input current - normal oper.


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