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BTS7810K Dataheets PDF



Part Number BTS7810K
Manufacturers Infineon Technologies AG
Logo Infineon Technologies AG
Description TrilithIC
Datasheet BTS7810K DatasheetBTS7810K Datasheet (PDF)

TrilithIC Data Sheet 1 1.1 • • • • • • • • • • • • • • • Overview Features BTS 7810 K Quad D-MOS switch Free configurable as bridge or quad-switch Optimized for DC motor management applications Low RDS ON: 26 mΩ high-side switch, 14 mΩ low-side switch (typical values @ 25 °C) Maximum peak current: typ. 42 A @ 25 °C= Very low quiescent current: typ. 4 µA @ 25 °C= Small outline, thermal optimized PowerPak Load and GND-short-circuit-protection Operates up to 40 V Status flag for over temperature .

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TrilithIC Data Sheet 1 1.1 • • • • • • • • • • • • • • • Overview Features BTS 7810 K Quad D-MOS switch Free configurable as bridge or quad-switch Optimized for DC motor management applications Low RDS ON: 26 mΩ high-side switch, 14 mΩ low-side switch (typical values @ 25 °C) Maximum peak current: typ. 42 A @ 25 °C= Very low quiescent current: typ. 4 µA @ 25 °C= Small outline, thermal optimized PowerPak Load and GND-short-circuit-protection Operates up to 40 V Status flag for over temperature Open load detection in Off-mode Overtemperature shut down with hysteresis Internal clamp diodes Isolated sources for external current sensing Under-voltage detection with hysteresis Ordering Code Q67060-S6129 P-TO263-15-1 Type BTS 7810 K 1.2 Description Package P-TO263-15-1 The BTS 7810 K is part of the TrilithIC family containing three dies in one package: One double high-side switch and two low-side switches. The drains of these three vertical DMOS chips are mounted on separated leadframes. The sources are connected to individual pins, so the BTS 7810 K can be used in H-bridge- as well as in any other configuration. The double high-side is manufactured in SMART SIPMOS® technology which combines low RDS ON vertical DMOS power stages with CMOS control circuit. The high-side switch is fully protected and contains the control and diagnosis circuit. To achieve low RDS ON and fast switching performance, the low-side switches are manufactured in S-FET 2 logic level technology. The equivalent standard product is the SPD30N06S2L-13. Data Sheet 1 2003-03-11 BTS 7810 K 1.3 Pin Configuration (top view) Molding Compound NC SL1 IL1 NC IH1 ST1 SH1 DHVS GND IH2 ST2 SH2 IL2 SL2 NC 1 Heat-Slug 1 2 18 3 4 5 Heat-Slug 2 6 7 8 9 10 11 12 Heat-Slug 3 13 16 14 15 DL2 17 DHVS DL1 Figure 1 Data Sheet 2 2003-03-11 BTS 7810 K 1.4 Pin No. 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 Pin Definitions and Functions Symbol NC SL1 IL1 NC IH1 ST1 SH1 DHVS GND IH2 ST2 SH2 IL2 SL2 NC DL2 DHVS DL1 Function Not connected Source of low-side switch 1 Analog input of low-side switch 1 Not connected Digital input of high-side switch 1 Status of high-side switch 1; open Drain output Source of high-side switch 1 Drain of high-side switches and power supply voltage Ground of high-side switches Digital input of high-side switch 2 Status of high-side switch 2; open Drain output Source of high-side switch 2 Analog input of low-side switch 2 Source of low-side switch 2 Not connected Drain of low-side switch 2 Heat-Slug 3 Drain of high-side switches and power supply voltage Heat-Slug 2 Drain of low-side switch 1 Heat-Slug 1 Pins written in bold type need power wiring. Data Sheet 3 2003-03-11 BTS 7810 K 1.5 Functional Block Diagram DHVS 6 8, 17 ST1 ST2 11 Diagnosis Biasing and Protection IH1 5 IH2 GND 10 Driver IN OUT 0 0 L L 0 1 L H 1 0 H L 1 1 H H RO1 RO2 16 12 SH2 DL2 9 7 18 SH1 DL1 3 IL1 13 IL2 2 14 SL1 SL2 Figure 2 Block Diagram Data Sheet 4 2003-03-11 BTS 7810 K 1.6 Circuit Description Input Circuit The control inputs IH1,2 consist of TTL/CMOS compatible Schmitt-Triggers with hysteresis. Buffer amplifiers are driven by these stages and convert the logic signal into the necessary form for driving the power output stages. The inputs are protected by ESD clamp-diodes. The inputs IL1 and IL2 are connected to the gates of the standard N-channel vertical power-MOS-FETs. Output Stages The output stages consist of a low RDS ON Power-MOS H-bridge. In H-bridge configuration, the D-MOS body diodes can be used for freewheeling when commutating inductive loads. If the high-side switches are used as single switches, positive and negative voltage spikes which occur when driving inductive loads are limited by integrated power clamp diodes. Short Circuit Protection The outputs are protected against – output short circuit to ground – overload (load short circuit). An internal OP-amp controls the Drain-Source-voltage by comparing the DS-voltagedrop with an internal reference voltage. Above this trippoint the OP-Amp reduces the output current depending on the junction temperature and the drop voltage. In the case of overloaded high-side switches the status output is set to low. Overtemperature Protection The high-side switches incorporate an overtemperature protection circuit with hysteresis which switches off the output transistors and sets the status output to low. Undervoltage-Lockout (UVLO) When VS reaches the switch-on voltage VUVON the IC becomes active with a hysteresis. The high-side output transistors are switched off if the supply voltage VS drops below the switch off value VUVOFF. Open Load Detection Open load is detected by voltage measurement in off state. If the output voltage exceeds a specified level the error flag is set with a delay. Data Sheet 5 2003-03-11 BTS 7810 K Status Flag The two status flag outputs are an open drain output with Zener-diode which require a pull-up resistor, c.f. the applicati.


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