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BTS4140N Dataheets PDF



Part Number BTS4140N
Manufacturers Infineon Technologies AG
Logo Infineon Technologies AG
Description Smart High-Side Power Switch
Datasheet BTS4140N DatasheetBTS4140N Datasheet (PDF)

BTS 4140 N Smart High-Side Power Switch One Channel: 1 x 1Ω Features • Current controlled input • Short circuit protection • Current limitation • Overload protection • Overvoltage protection (including load dump) • Switching inductive loads • Clamp of negative voltage at output with inductive loads • Thermal shutdown with restart • ESD - Protection • Loss of GND and loss of Vbb protection • Very low standby current • Reverse battery protection • Improved electromagnetic compatibility (EMC) Appl.

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BTS 4140 N Smart High-Side Power Switch One Channel: 1 x 1Ω Features • Current controlled input • Short circuit protection • Current limitation • Overload protection • Overvoltage protection (including load dump) • Switching inductive loads • Clamp of negative voltage at output with inductive loads • Thermal shutdown with restart • ESD - Protection • Loss of GND and loss of Vbb protection • Very low standby current • Reverse battery protection • Improved electromagnetic compatibility (EMC) Application • All types of resistive, inductive and capacitive loads • Current controlled power switch for 12V, 24V and 42V DC applications • Driver for electromechanical relays • Signal amplifier 2 1 VPS05163 Product Summary Overvoltage protection Operating voltage On-state resistance Vbbin(AZ) Vbb(on) RON SOT-223 4 62 1 V Ω 4.9...60 V 3 General Description N channel vertical power MOSFET with charge pump and current controlled input, monolithically integrated in Smart SIPMOS technology. Providing embedded protective functions. Page 1 2004-01-27 BTS 4140 N Block Diagram + V bb 2 /4 C o n tro l C irc u it OUT 3 R IN IN 1 R L T e m p e ra tu re Sensor GND Pin 1 2 3 4 Symbol IN Vbb OUT Vbb Function Input, activates the power switch in case of connection to GND Positive power supply voltage Output to the load Positive power supply voltage Page 2 2004-01-27 BTS 4140 N Maximum Ratings Parameter at Tj = 25°C, unless otherwise specified Supply voltage Load current (Short - circuit current, see page 5) Maximum current through the input pin ( DC ) Operating temperature Storage temperature Power dissipation1) TA = 25 °C Inductive load switch-off energy dissipation 2) single pulse Tj = 150 °C, IL = 0.15 A Load dump protection 3) VLoadDump4)= VA + VS RI=2Ω, td=400ms, VIN= low or high IL = 150 mA, Vbb = 13,5 V Vbb = 27 V Electrostatic discharge voltage (Human Body Model) VESD according to ANSI EOS/ESD - S5.1 - 1993 ESD STM5.1 - 1998 Input pin all other pins ±1 ±5 93.5 127 kV VLoaddump V EAS 1 J Vbb IL I IN Tj T stg Ptot 60 self limited ±15 -40 ...+150 -55 ... +150 1.7 W V A mA °C Symbol Value Unit 1Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6 cm2 (one layer, 70µm thick) copper area for V bb connection. PCB is vertical without blown air. 2not subject to production test, specified by design 3more details see EMC-Characteristics on page 7 4V Loaddump is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839 . Page 3 2004-01-27 BTS 4140 N Electrical Characteristics Parameter at Tj = -40...150 °C, Vbb = 9...42 V unless otherwise specified Thermal Characteristics Thermal resistance @ min. footprint Thermal resistance @ 6 cm 2 cooling area 1) Thermal resistance, junction - soldering point Load Switching Capabilities and Characteristics On-state resistance Pin1 connencted to GND Tj = 25 °C, IL = 150 mA, Vbb = 9...52 V Tj = 150 °C Tj = 25 °C, IL = 50 mA, Vbb = 6 V Nominal load current2) Device on PCB 1) Ta = 85 °C , Tj ≤ 150 °C Turn-o.


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