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BTS410G2 Dataheets PDF



Part Number BTS410G2
Manufacturers Siemens Semiconductor Group
Logo Siemens Semiconductor Group
Description Smart Highside Power Switch
Datasheet BTS410G2 DatasheetBTS410G2 Datasheet (PDF)

PROFET® BTS 410 G2 Smart Highside Power Switch Features • Overload protection • Current limitation • Short circuit protection • Thermal shutdown • Overvoltage protection (including load dump) • Fast demagnetization of inductive loads • Reverse battery protection1) • Undervoltage and overvoltage shutdown with auto-restart and hysteresis • Open drain diagnostic output • Open load detection in ON-state • CMOS compatible input • Loss of ground and loss of Vbb protection • Electrostatic discharge (E.

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PROFET® BTS 410 G2 Smart Highside Power Switch Features • Overload protection • Current limitation • Short circuit protection • Thermal shutdown • Overvoltage protection (including load dump) • Fast demagnetization of inductive loads • Reverse battery protection1) • Undervoltage and overvoltage shutdown with auto-restart and hysteresis • Open drain diagnostic output • Open load detection in ON-state • CMOS compatible input • Loss of ground and loss of Vbb protection • Electrostatic discharge (ESD) protection Product Summary Overvoltage protection Operating voltage On-state resistance Load current (ISO) Current limitation Vbb(AZ) Vbb(on) RON IL(ISO) IL(SCr) 65 V 4.7 ... 42 V 220 mΩ 1.8 A 2.7 A TO-220AB/5 5 1 Straight leads 5 5 1 Standard SMD Application • µC compatible power switch with diagnostic feedback for 12 V and 24 V DC grounded loads • Most suitable for inductive loads • Replaces electromechanical relays, fuses and discrete circuits General Description N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, monolithically integrated in Smart SIPMOS® technology. Fully protected by embedded protection functions. + V bb 3 Voltage source Overvoltage protection Current limit Gate protection V Logic Voltage sensor Charge pump Level shifter Rectifier Open load ESD Logic detection Limit for unclamped ind. loads OUT 2 IN Temperature sensor 5 Load 4 ST GND ® PROFET Load GND 1 Signal GND 1) With external current limit (e.g. resistor RGND=150 Ω) in GND connection, resistors in series with IN and ST connections, reverse load current limited by connected load. Semiconductor Group 1 03.97 BTS 410 G2 Pin 1 2 3 4 5 Symbol GND IN Vbb ST OUT (Load, L) I + S O Function Logic ground Input, activates the power switch in case of logical high signal Positive power supply voltage, the tab is shorted to this pin Diagnostic feedback, low on failure Output to the load Maximum Ratings at Tj = 25 °C unless otherwise specified Parameter Supply voltage (overvoltage protection see page 3) Load dump protection2) VLoadDump = UA + Vs, UA = 13.5 V RI3)= 2 Ω, RL= 6.6 Ω, td= 400 ms, IN= low or high Load current (Short circuit current, see page 4) Operating temperature range Storage temperature range Power dissipation (DC), TC ≤ 25 °C Inductive load switch-off energy dissipation, single pulse Vbb = 12V, Tj,start = 150°C, TC = 150°C const. IL = 1.8 A, ZL = 2.3 H, 0 Ω: Electrostatic discharge capability (ESD) IN: (Human Body Model) all other pins: acc. MIL-STD883D, method 3015.7 and ESD assn. std. S5.1-1993 Symbol Vbb VLoad dump4) Values 65 100 self-limited -40 ...+150 -55 ...+150 50 4.5 1 2 -0.5 ... +6 ±5.0 ±5.0 Unit V V A °C W J kV V mA IL Tj Tstg Ptot EAS VESD VIN IIN IST Input voltage (DC) Current through input pin (DC) Current through status pin (DC) see internal circuit diagrams page 6 Thermal Characteristics Parameter and Conditions Thermal resistance Symbol min ---chip - case: .


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