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BTS409L1 Dataheets PDF



Part Number BTS409L1
Manufacturers Infineon Technologies AG
Logo Infineon Technologies AG
Description Smart High-Side Power Switch
Datasheet BTS409L1 DatasheetBTS409L1 Datasheet (PDF)

Smart High-Side Power Switch PROFET® BTS409L1 Features  Overload protection  Current limitation  Short circuit protection  Thermal shutdown  Overvoltage protection (including load dump)  Fast demagnetization of inductive loads  Reverse battery protection1)  Undervoltage and overvoltage shutdown with auto-restart and hysteresis  Open drain diagnostic output  Open load detection in ON-state  CMOS compatible input  Loss of ground and loss of Vbb protection  Electrostatic discharge (E.

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Smart High-Side Power Switch PROFET® BTS409L1 Features  Overload protection  Current limitation  Short circuit protection  Thermal shutdown  Overvoltage protection (including load dump)  Fast demagnetization of inductive loads  Reverse battery protection1)  Undervoltage and overvoltage shutdown with auto-restart and hysteresis  Open drain diagnostic output  Open load detection in ON-state  CMOS compatible input  Loss of ground and loss of Vbb protection  Electrostatic discharge (ESD) protection  Green Product (RoHS compliant)  AEC Qualified Product Summary Overvoltage protection Operating voltage On-state resistance Load current (ISO) Current limitation Vbb(AZ) Vbb(on) RON IL(ISO) IL(SCr) 43 V 5.0 ... 34 V 200 m 2.3 A 4A PG-TO263-5-2 Application  C compatible power switch with diagnostic feedback for 12 V and 24 V DC grounded loads  All types of resistive, inductive and capacitve loads  Replaces electromechanical relays, fuses and discrete circuits General Description N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, monolithically integrated in Smart SIPMOS technology. Fully protected by embedded protection functions. 2 IN Voltage source V Logic Voltage sensor ESD 4 ST Logic Overvoltage protection Current Gate limit protection + Vbb 3 Charge puLmevpel Rsehcifttifeier r Limit for unclampe idnd. loads Open load Short to Vbb detection OUT Temperature 5 sensor RO Load GND 1 Signal GND PROFET  GND Load GND 1) With external current limit (e.g. resistor RGND=150 ) in GND connection, resistor in series with ST connection, reverse load current limited by connected load. Data Sheet 1 2013-10-10 BTS409L1 Pin Symbol Function 1 GND - Logic ground 2 IN I Input, activates the power switch in case of logical high signal 3 Vbb + Positive power supply voltage, the tab is shorted to this pin 4 ST S Diagnostic feedback, low on failure 5 OUT O Output to the load (Load, L) Data Sheet 2 2013-10-10 BTS409L1 Maximum Ratings at Tj = 25 °C unless otherwise specified Parameter Symbol Supply voltage (overvoltage protection see page 4) Vbb Supply voltage for short circuit protection Tj Start=-40 ...+150°C Vbb Load dump protection2) VLoadDump = UA + Vs, UA = 13.5 V VLoad dump4) RI3)= 2 , RL= 5.3 , td= 200 ms, IN= low or high Load current (Short circuit current, see page 5) IL Operating temperature range Tj Storage temperature range Tstg Power dissipation (DC), TC  25 °C Ptot Inductive load switch-off energy dissipation, single pulse Vbb = 12V, Tj,start = 150°C, TC = 150°C const. IL = 2.3 A, ZL = 98 mH, 0 : EAS Electrostatic discharge capability (ESD) IN: VESD (Human Body Model) all other pins: acc. MIL-STD883D, method 3015.7 and ESD assn. std. S5.1-1993 Input voltage (DC) Current through input pin (DC) Current through status pin (DC) see internal circuit diagrams page 7 VIN IIN IST Values 43 34 Unit V V 60 V self-limited -40 ...+150 -55 ...+150 18 A °C W 335 mJ 1.0 kV 2.0 -10 ... +16 2.0 5.0 V mA Thermal Characteristics Parameter and Conditions Symbol Thermal resistance chip - case: RthJC junction - ambient (free air): RthJA SMD version, device on PCB5): Values min typ max -- -- 7 -- -- 75 39 Unit K/W 2) Supply voltages higher than Vbb(AZ) require an external current limit for the GND and status pins, e.g. with a 150  resistor in the GND connection and a 15 k resistor in series with the status pin. A resistor for the protection of the input is integrated. 3) RI = internal resistance of the load dump test pulse generator 4) VLoad dump is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839 5) Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70m thick) copper area for Vbb connection. PCB is vertical without blown air. Data Sheet 3 2013-10-10 Electrical Characteristics Parameter and Conditions at Tj = 25 °C, Vbb = 12 V unless otherwise specified BTS409L1 Symbol Values Unit min typ max Load Switching Capabilities and Characteristics On-state resistance (pin 3 to 5) IL = 1.8 A Tj=25 °C: Tj=150 °C: Nominal load current, ISO Norm (pin 3 to 5) VON = 0.5 V, TC = 85 °C Output current (pin 5) while GND disconnected or GND pulled up, Vbb=30 V, VIN= 0, see diagram page 8 Turn-on time IN to 90% VOUT: Turn-off time IN RL = 12 , Tj =-40...+150°C to 10% VOUT: Slew rate on 10 to 30% VOUT, RL = 12 , Tj =-40...+150°C Slew rate off 70 to 40% VOUT, RL = 12 , Tj =-40...+150°C RON IL(ISO) IL(GNDhigh) ton toff dV /dton -dV/dtoff -- 160 200 m 320 400 1.8 2.3 -- A -- -- 10 mA 80 200 400 80 200 400 s 0.1 -- 1 V/s 0.1 -- 1 V/s Operating Parameters Operating voltage6) Tj =-40...+150°C: Vbb(on) 5.0 -- 34 V Undervoltage shutdown Tj =-40...+150°C: Vbb(under) 3.5 -- 5.0 V Undervoltage restart Tj =-40...+25°C: Vbb(u rst) Tj =+150°C: -- -- 5.0 V 7.0 Undervoltage restart of charge pump Vbb(ucp) see di.


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