BTS3142D

Smart Low Side Power Switch Power HITFET BTS 3142D Features · Logic Level Input · Input Protection (ESD) · Thermal shutdown Green product (RoHS compliant) · Overload protection · Short circuit protection · Overvoltage protection · Current limitation · Analog driving possible Product Summary Drain source voltage VDS 42 V On-state resistance RDS(on) 28 mΩ Nominal load current Clamping energy ID(Nom) EAS 4.6 A 3.5 J P / PG-TO252-3-11 Application All kinds of resistive, inductive and capacitive loads in switching or linear applications μC compatible power switch for 12 V DC applications Replaces electromechanical relays and discrete circuits General Description N channel vertical power FET in Smart SIPMOS ® technology. Fully protected by embedded protection functions. Vbb HITFET ® In Pin 1 Gate-Driving Unit Current Limitation OvervoltageProtection ESD Overload Protection Overtemperature Protection Short circuit Protection Drain Pin 2 and 4 (TAB) Source Pin 3 M Datasheet 1 Rev. 1.4, 2013-03-07 Smart Low Side Power Switch Power HITFET BTS 3142D Maximum Ratings at Tj = 25 °C, unless otherwise specified 1) Parameter Symbol Drain source voltage Drain source voltage for short circuit protection Tj = -40 ... +150 °C VDS VDS(SC) Continuous input current -0.2V ≤ VIN ≤ 10V VIN < -0.2V or VIN > 10V IIN Operating temperature Storage temperature Power dissipation 4) TC = 85 °C 6cm2 cooling area , TA = 85 °C Tj Tstg Ptot Unclamped single pulse induct...