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BTS140A Dataheets PDF



Part Number BTS140A
Manufacturers Siemens Semiconductor Group
Logo Siemens Semiconductor Group
Description TEMPFET (N channel Enhancement mode Temperature sensor with thyristor characteristic)
Datasheet BTS140A DatasheetBTS140A Datasheet (PDF)

TEMPFET® BTS 140A Features q q q q N channel Enhancement mode Temperature sensor with thyristor characteristic The drain pin is electrically shorted to the tab 1 2 3 Pin 1 G 2 D 3 S Type BTS 140A VDS 50 V ID 42 A RDS(on) 0.028 Ω Package TO-220AB Ordering Code C67078-S5011-A2 Maximum Ratings Parameter Drain-source voltage Drain-gate voltage, RGS = 20 kΩ Gate-source voltage Continuous drain current, TC = 65 °C ISO drain current TC = 85° C, VGS = 10 V, VDS = 0.5 V Pulsed drain curren.

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TEMPFET® BTS 140A Features q q q q N channel Enhancement mode Temperature sensor with thyristor characteristic The drain pin is electrically shorted to the tab 1 2 3 Pin 1 G 2 D 3 S Type BTS 140A VDS 50 V ID 42 A RDS(on) 0.028 Ω Package TO-220AB Ordering Code C67078-S5011-A2 Maximum Ratings Parameter Drain-source voltage Drain-gate voltage, RGS = 20 kΩ Gate-source voltage Continuous drain current, TC = 65 °C ISO drain current TC = 85° C, VGS = 10 V, VDS = 0.5 V Pulsed drain current, Short circuit current, Symbol Values 50 50 ± 20 42 13.5 168 80 1200 125 – 55 ... + 150 E 55/150/56 K/W ≤ 1.0 ≤ 75 °C – W A Unit V VDS VDGR VGS ID ID-ISO ID puls ISC PSCmax Ptot Tj, Tstg – – TC = 25 °C Tj = – 55 ... + 150 °C Short circuit dissipation, Tj = – 55 ... + 150 °C Power dissipation Operating and storage temperature range DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 Thermal resistance Chip-case Chip-ambient Rth JC Rth JA Semiconductor Group 1 04.97 BTS 140A Electrical Characteristics at Tj = 25 °C, unless otherwise specified. Parameter Symbol min. Static Characteristics Drain-source breakdown voltage VGS = 0, ID = 0.25 mA Gate threshold voltage VGS = VDS, ID = 1 mA Zero gate voltage drain current VGS = 0 V, VDS = 50 V Tj = 25 °C Tj = 125 °C Gate-source leakage current VGS = ± 20 V, VDS = 0 Tj = 25 °C Tj = 150 °C Drain-source on-state resistance VGS = 10 V, ID =32 A Dynamic Characteristics Forward transconductance VDS ≥ 2 × ID × RDS(on)max, ID = 32 A Input capacitance VGS = 0, VDS = 25 V, f = 1 MHz Output capacitance VGS = 0, VDS = 25 V, f = 1 MHz Reverse transfer capacitance VGS = 0, VDS = 25 V, f = 1 MHz Values typ. max. Unit V(BR)DSS 50 – 3.0 – 3.5 V VGS(th) 2.5 I DSS – – 0.1 10 1.0 100 µA I GSS – – 10 2.0 0.024 100 4.0 0.028 nA µA Ω – RDS(on) gfs 12 26 1800 800 280 35 85 220 140 – S pF – 2400 1200 450 50 130 280 180 ns Ciss Coss – Crss – – – – – Turn-on time ton, (ton = td(on) + tr) td(on) VCC = 25 V, VGS = 10 V, ID = 3 A, RGS = 50 Ω t r Turn-off time toff, (toff = td(off) + tf) td(off) VCC = 25 V, VGS = 10 V, ID = 3 A, RGS = 50 Ω t f Semiconductor Group 2 BTS 140A Electrical Characteristics (cont’d) at Tj = 25 °C, unless otherwise specified. Parameter Symbol min. Reverse Diode Continuous source current Pulsed source current Diode forward on-voltage I F = 84 A, VGS = 0 Reverse recovery time I F = I S, diF/dt = 100 A/µs, VR = 30 V Reverse recovery charge I F = I S, diF/dt = 100 A/µs, VR = 30 V Temperature Sensor Forward voltage I TS(on) = 10 mA, Tj = – 55 ... + 150 °C Sensor override, tp ≤ 100 µs Tj = – 55 ... + 160 °C Forward current Tj = – 55 ... + 150 °C Sensor override, tp ≤ 100 µs Tj = – 55 ... + 160 °C Holding current, VTS(off) = 5 V, Switching temperature VTS = 5 V Turn-off time VTS = 5 V, ITS(on) = 2 mA Values typ. max. Unit IS I SM VSD – – – – – 1.8 80 0.14 42 168 A V 2.2 ns – µC – t rr – Q rr – VTS(on) – – 1.4 – – – 0.1 0.2 – – 1.50 10 V ITS(on) – – 5 600 0.5 0.3 mA Tj =.


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