Document
TEMPFET®
BTS 140A
Features
q q q q
N channel Enhancement mode Temperature sensor with thyristor characteristic The drain pin is electrically shorted to the tab
1 2
3
Pin
1 G
2 D
3 S
Type BTS 140A
VDS
50 V
ID
42 A
RDS(on)
0.028 Ω
Package TO-220AB
Ordering Code C67078-S5011-A2
Maximum Ratings Parameter Drain-source voltage Drain-gate voltage, RGS = 20 kΩ Gate-source voltage Continuous drain current, TC = 65 °C ISO drain current TC = 85° C, VGS = 10 V, VDS = 0.5 V Pulsed drain current, Short circuit current, Symbol Values 50 50 ± 20 42 13.5 168 80 1200 125 – 55 ... + 150 E 55/150/56 K/W ≤ 1.0 ≤ 75 °C – W A Unit V
VDS VDGR VGS ID ID-ISO ID puls ISC PSCmax Ptot Tj, Tstg
– –
TC = 25 °C Tj = – 55 ... + 150 °C
Short circuit dissipation, Tj = – 55 ... + 150 °C Power dissipation Operating and storage temperature range DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 Thermal resistance Chip-case Chip-ambient
Rth JC Rth JA
Semiconductor Group
1
04.97
BTS 140A
Electrical Characteristics at Tj = 25 °C, unless otherwise specified. Parameter Symbol min. Static Characteristics Drain-source breakdown voltage VGS = 0, ID = 0.25 mA Gate threshold voltage VGS = VDS, ID = 1 mA Zero gate voltage drain current VGS = 0 V, VDS = 50 V Tj = 25 °C Tj = 125 °C Gate-source leakage current VGS = ± 20 V, VDS = 0 Tj = 25 °C Tj = 150 °C Drain-source on-state resistance VGS = 10 V, ID =32 A Dynamic Characteristics Forward transconductance VDS ≥ 2 × ID × RDS(on)max, ID = 32 A Input capacitance VGS = 0, VDS = 25 V, f = 1 MHz Output capacitance VGS = 0, VDS = 25 V, f = 1 MHz Reverse transfer capacitance VGS = 0, VDS = 25 V, f = 1 MHz Values typ. max. Unit
V(BR)DSS
50 – 3.0 – 3.5
V
VGS(th)
2.5
I DSS
– – 0.1 10 1.0 100
µA
I GSS
– – 10 2.0 0.024 100 4.0 0.028 nA µA Ω –
RDS(on)
gfs
12 26 1800 800 280 35 85 220 140 –
S pF – 2400 1200 450 50 130 280 180 ns
Ciss Coss
–
Crss
– – – – –
Turn-on time ton, (ton = td(on) + tr) td(on) VCC = 25 V, VGS = 10 V, ID = 3 A, RGS = 50 Ω t
r
Turn-off time toff, (toff = td(off) + tf) td(off) VCC = 25 V, VGS = 10 V, ID = 3 A, RGS = 50 Ω t
f
Semiconductor Group
2
BTS 140A
Electrical Characteristics (cont’d) at Tj = 25 °C, unless otherwise specified. Parameter Symbol min. Reverse Diode Continuous source current Pulsed source current Diode forward on-voltage I F = 84 A, VGS = 0 Reverse recovery time I F = I S, diF/dt = 100 A/µs, VR = 30 V Reverse recovery charge I F = I S, diF/dt = 100 A/µs, VR = 30 V Temperature Sensor Forward voltage I TS(on) = 10 mA, Tj = – 55 ... + 150 °C Sensor override, tp ≤ 100 µs Tj = – 55 ... + 160 °C Forward current Tj = – 55 ... + 150 °C Sensor override, tp ≤ 100 µs Tj = – 55 ... + 160 °C Holding current, VTS(off) = 5 V, Switching temperature VTS = 5 V Turn-off time VTS = 5 V, ITS(on) = 2 mA Values typ. max. Unit
IS I SM VSD
– – –
– – 1.8 80 0.14
42 168
A V
2.2 ns – µC –
t rr
–
Q rr
–
VTS(on)
– – 1.4 – – – 0.1 0.2 – – 1.50 10
V
ITS(on)
– – 5 600 0.5 0.3
mA
Tj =.