BTS117

HITFET® BTS 117 Smart Lowside Power Switch Features Logic Level Input Input Protection (ESD) Thermal Shutdown Overload protection Short circuit protection Overvoltage protection Current limitation Status feedback with external input resistor Analog driving possible Product Summary Drain source voltage On-state resistance Current limit Nominal load current Clamping energy VDS RDS(on) ID(lim) ID(ISO) EAS 60 7 3.5 V A A 100 mΩ 1000 mJ Application All kinds of resistive, inductive and capacitive loads in switching or linear applications µC compatible power switch for 12 V and 24 V DC applications Replaces electromechanical relays and discrete circuits General Description N channel vertical power FET in Smart SIPMOS ® chip on chip technology. Fully protected by embedded protected functions. V bb + LOAD M Drain 2 dv/dt limitation Current lim itation Overvoltage protection 1 IN ESD Overload protection Overtemperature protection Short circuit circuit Short protection protection Source 3 HIT F ET ® Semiconductor Group Page 1 13.07.1998 BTS 117 Maximum Ratings at Tj = 25 °C unless otherwise specified Parameter Drain source voltage Drain source voltage for short circuit protection Continuous input current 1) -0.2V ≤ VIN ≤ 10V Symbol Value 60 32 mA no limit | IIN | ≤ 2 Unit V VDS VDS(SC) IIN VIN < -0.2V or VIN > 10V Operating temperature Storage temperature Power dissipation Tj Tstg Ptot EAS - 40 ... +150 - 55 ... +150 50 1000 3000 °C ...