Document
TEMPFET®
BTS 113A
Features
q q q q q
N channel Logic level Enhancement mode Temperature sensor with thyristor characteristic The drain pin is electrically shorted to the tab
1
2
3
Pin
1 G
2 D
3 S
Type BTS 113A
VDS
60 V
ID
11.5 A
RDS(on)
0.17 Ω
Package TO-220AB
Ordering Code C67078-S5015-A2
Maximum Ratings Parameter Drain-source voltage Drain-gate voltage, RGS = 20 kΩ Gate-source voltage Continuous drain current, TC = 25 °C ISO drain current TC = 85 ˚C, VGS = 10 V, VDS = 0.5 V Pulsed drain current, Short circuit current, Symbol Values 60 60 ± 10 11.5 2.2 46 27 400 40 – 55 ... + 150 E 55/150/56 K/W ≤ 3.1 ≤ 75 °C – W A Unit V
VDS VDGR VGS ID ID-ISO ID puls ISC PSCmax Ptot Tj, Tstg
– –
TC = 25 °C Tj = – 55 ... + 150 °C
Short circuit dissipation, Tj = – 55 ... + 150 °C Power dissipation Operating and storage temperature range DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 Thermal resistance Chip-case Chip-ambient
Rth JC Rth JA
Semiconductor Group
1
04.97
BTS 113A
Electrical Characteristics at Tj = 25 °C, unless otherwise specified. Parameter Symbol min. Static Characteristics Drain-source breakdown voltage VGS = 0, ID = 0.25 mA Gate threshold voltage VGS = VDS, ID = 1 mA Zero gate voltage drain current VGS = 0 V, VDS = 60 V Tj = 25 °C Tj = 125 °C Gate-source leakage current VGS = ± 20 V, VDS = 0 Tj = 25 °C Tj = 150 °C Drain-source on-state resistance VGS = 4.5 V, ID = 5.8 A Dynamic Characteristics Forward transconductance VDS ≥ 2 × ID × RDS(on)max, ID = 5.8 A Input capacitance VGS = 0, VDS = 25 V, f = 1 MHz Output capacitance VGS = 0, VDS = 25 V, f = 1 MHz Reverse transfer capacitance VGS = 0, VDS = 25 V, f = 1 MHz Turn-on time ton, (ton = td(on) + tr) VCC = 30 V, VGS = 5.0 V, ID = 3.0 A, RGS = 50 Ω Turn-off time toff, (toff = td(off) + tf) VCC = 30 V, VGS = 5.0 V, ID = 3.0 A, RGS = 50 Ω Values typ. max. Unit
V(BR)DSS
60 – 2.0 – 2.5
V
VGS(th)
1.6
IDSS
– – 0.1 10 1.0 100
µA
IGSS
– – 10 2 0.14 100 4 0.17 nA µA Ω –
RDS(on)
gfs
4.5 7.5 420 160 60 15 55 45 40 –
S pF – 560 250 110 25 80 60 55 ns
Ciss Coss
–
Crss
–
td(on) tr td(off) tf
– – – –
Semiconductor Group
2
BTS 113A
Electrical Characteristics (cont’d) at Tj = 25 °C, unless otherwise specified. Parameter Symbol min. Reverse Diode Continuous source current Pulsed source current Diode forward on-voltage I F = 28 A, VGS = 0 Reverse recovery time I F = I S, diF/dt = 100 A/µs, VR = 30 V Reverse recovery charge I F = I S, diF/dt = 100 A/µs, VR = 30 V Temperature Sensor Forward voltage I TS(on) = 5 mA, Tj = – 55 ... + 150 °C Sensor override, tp ≤ 100 µs Tj = – 55 ... + 160 °C Forward current Tj = – 55 ... + 150 °C Sensor override, tp ≤ 100 µs Tj = – 55 ... + 160 °C Holding current, VTS(off) = 5.0 V, Tj = 25 °C Tj = 150 °C Switching temperature VTS = 5.0 V Turn-off time Values typ. max. Unit
IS I SM VSD
– – –
– – 1.5 60 0.10
11.5 46
A V
1.8 ns – µC –
t rr
–
Q rr
–
VTS(on)
– – 1.4 – – – 0.3 0.2 – – 1.5 10
V
ITS(on)
– – 5 600 0.5 0.3
mA
IH TTS(on)
0.05 0.05 150
°C – µs 0.5 2.5
toff
VTS = 5.0 V, ITS(on) = 2 mA
Semiconductor Group
3
BTS 113A
Examples for short-circuit protection at Tj = – 55 ... + 150 °C, unless otherwise specified. Parameter Symbol 1 Examples 2 – Unit
Drain-source voltage Gate-source voltage Short-circuit current Short-circuit dissipation Response time Tj = 25 °C, before short circuit
VDS VGS ISC PSC tSC(off)
15 5.0 27 400 20
30 3.5 12.6 380 20
– – – – –
V A W ms
Short-circuit protection ISC = f (VDS) Parameter: VGS Diagram to determine ISC for Tj = – 55 ... + 150 ˚C
Max. gate voltage VGS(SC) = f (VDS) Parameter: Tj = – 55 ... + 150 °C
Semiconductor Group
4
BTS 113A
Max. power dissipation Ptot = f (TC)
Typ. drain-source on-state resistance RDS(on) = f (ID) Parameter: VGS
Typical output characteristics ID = f (VDS) Parameter: tp 80 = µs
Safe operating area ID = f (VDS) Parameter: D = 0.01, TC = 25 °C
Semiconductor Group
5
BTS 113A
Drain-source on-state resistance RDS(on) = f (Tj) Parameter: ID = – 5 A, VGS = 4.5 V
Gate threshold voltage VGS(th) = f (Tj) Parameter: VDS = VGS, ID = – 1 mA
Typ. transfer characteristic ID = f (VGS) Parameter: tp = 80 µs, VDS = – 25 V
Typ. transconductance gfs = f (ID) Parameter: tp = 80 µs, VDS = – 25 V
Semiconductor Group
6
BTS 113A
Continuous drain current ID = f (TC) Parameter: VGS ≥ 4.5 V
Forward characteristics of reverse diode IF = f (VSD) Parameter: Tj, tp = 80 µs
Typ. gate-source leakage current IGSS = f (TC) Parameter: VGS = 10 V, VDS = 0
Typ. capacitances C = f (VDS) Parameter: VGS = 0, f = 1 MHz
Semiconductor Group
7
BTS 113A
Transient thermal impedance ZthJC = f (tp) Parameter: D = tp/T
Semiconductor Group
8
BTS 113A Package Outlines
TO 220 AB Standard
Ordering Code C67078-S5015-A3
TO 220 AB Ordering Code SMD Version E 3045 A C67078-S5015-A4 (Tape & reel)
9.9 9.5
2.8
3.7
4.4 1.3
12.8
17.5
1
4.6
3)
9.2
1)
0.75 2.54 1.05 2.54
0.5 2.4
GPT05155
1) punch direction, burr max. 0.04 2) d.