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BTS113A Dataheets PDF



Part Number BTS113A
Manufacturers Siemens Semiconductor Group
Logo Siemens Semiconductor Group
Description TEMPFET (N channel Logic level Enhancement mode Temperature sensor with thyristor characteristic)
Datasheet BTS113A DatasheetBTS113A Datasheet (PDF)

TEMPFET® BTS 113A Features q q q q q N channel Logic level Enhancement mode Temperature sensor with thyristor characteristic The drain pin is electrically shorted to the tab 1 2 3 Pin 1 G 2 D 3 S Type BTS 113A VDS 60 V ID 11.5 A RDS(on) 0.17 Ω Package TO-220AB Ordering Code C67078-S5015-A2 Maximum Ratings Parameter Drain-source voltage Drain-gate voltage, RGS = 20 kΩ Gate-source voltage Continuous drain current, TC = 25 °C ISO drain current TC = 85 ˚C, VGS = 10 V, VDS = 0.5 V Pu.

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TEMPFET® BTS 113A Features q q q q q N channel Logic level Enhancement mode Temperature sensor with thyristor characteristic The drain pin is electrically shorted to the tab 1 2 3 Pin 1 G 2 D 3 S Type BTS 113A VDS 60 V ID 11.5 A RDS(on) 0.17 Ω Package TO-220AB Ordering Code C67078-S5015-A2 Maximum Ratings Parameter Drain-source voltage Drain-gate voltage, RGS = 20 kΩ Gate-source voltage Continuous drain current, TC = 25 °C ISO drain current TC = 85 ˚C, VGS = 10 V, VDS = 0.5 V Pulsed drain current, Short circuit current, Symbol Values 60 60 ± 10 11.5 2.2 46 27 400 40 – 55 ... + 150 E 55/150/56 K/W ≤ 3.1 ≤ 75 °C – W A Unit V VDS VDGR VGS ID ID-ISO ID puls ISC PSCmax Ptot Tj, Tstg – – TC = 25 °C Tj = – 55 ... + 150 °C Short circuit dissipation, Tj = – 55 ... + 150 °C Power dissipation Operating and storage temperature range DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 Thermal resistance Chip-case Chip-ambient Rth JC Rth JA Semiconductor Group 1 04.97 BTS 113A Electrical Characteristics at Tj = 25 °C, unless otherwise specified. Parameter Symbol min. Static Characteristics Drain-source breakdown voltage VGS = 0, ID = 0.25 mA Gate threshold voltage VGS = VDS, ID = 1 mA Zero gate voltage drain current VGS = 0 V, VDS = 60 V Tj = 25 °C Tj = 125 °C Gate-source leakage current VGS = ± 20 V, VDS = 0 Tj = 25 °C Tj = 150 °C Drain-source on-state resistance VGS = 4.5 V, ID = 5.8 A Dynamic Characteristics Forward transconductance VDS ≥ 2 × ID × RDS(on)max, ID = 5.8 A Input capacitance VGS = 0, VDS = 25 V, f = 1 MHz Output capacitance VGS = 0, VDS = 25 V, f = 1 MHz Reverse transfer capacitance VGS = 0, VDS = 25 V, f = 1 MHz Turn-on time ton, (ton = td(on) + tr) VCC = 30 V, VGS = 5.0 V, ID = 3.0 A, RGS = 50 Ω Turn-off time toff, (toff = td(off) + tf) VCC = 30 V, VGS = 5.0 V, ID = 3.0 A, RGS = 50 Ω Values typ. max. Unit V(BR)DSS 60 – 2.0 – 2.5 V VGS(th) 1.6 IDSS – – 0.1 10 1.0 100 µA IGSS – – 10 2 0.14 100 4 0.17 nA µA Ω – RDS(on) gfs 4.5 7.5 420 160 60 15 55 45 40 – S pF – 560 250 110 25 80 60 55 ns Ciss Coss – Crss – td(on) tr td(off) tf – – – – Semiconductor Group 2 BTS 113A Electrical Characteristics (cont’d) at Tj = 25 °C, unless otherwise specified. Parameter Symbol min. Reverse Diode Continuous source current Pulsed source current Diode forward on-voltage I F = 28 A, VGS = 0 Reverse recovery time I F = I S, diF/dt = 100 A/µs, VR = 30 V Reverse recovery charge I F = I S, diF/dt = 100 A/µs, VR = 30 V Temperature Sensor Forward voltage I TS(on) = 5 mA, Tj = – 55 ... + 150 °C Sensor override, tp ≤ 100 µs Tj = – 55 ... + 160 °C Forward current Tj = – 55 ... + 150 °C Sensor override, tp ≤ 100 µs Tj = – 55 ... + 160 °C Holding current, VTS(off) = 5.0 V, Tj = 25 °C Tj = 150 °C Switching temperature VTS = 5.0 V Turn-off time Values typ. max. Unit IS I SM VSD – – – – – 1.5 60 0.10 11.5 46 A V 1.8 ns – µC – t rr – Q rr – VTS(on) – – 1.4 – – – 0.3 0.2 – – 1.5 10 V ITS(on) – – 5 600 0.5 0.3 mA IH TTS(on) 0.05 0.05 150 °C – µs 0.5 2.5 toff VTS = 5.0 V, ITS(on) = 2 mA Semiconductor Group 3 BTS 113A Examples for short-circuit protection at Tj = – 55 ... + 150 °C, unless otherwise specified. Parameter Symbol 1 Examples 2 – Unit Drain-source voltage Gate-source voltage Short-circuit current Short-circuit dissipation Response time Tj = 25 °C, before short circuit VDS VGS ISC PSC tSC(off) 15 5.0 27 400 20 30 3.5 12.6 380 20 – – – – – V A W ms Short-circuit protection ISC = f (VDS) Parameter: VGS Diagram to determine ISC for Tj = – 55 ... + 150 ˚C Max. gate voltage VGS(SC) = f (VDS) Parameter: Tj = – 55 ... + 150 °C Semiconductor Group 4 BTS 113A Max. power dissipation Ptot = f (TC) Typ. drain-source on-state resistance RDS(on) = f (ID) Parameter: VGS Typical output characteristics ID = f (VDS) Parameter: tp 80 = µs Safe operating area ID = f (VDS) Parameter: D = 0.01, TC = 25 °C Semiconductor Group 5 BTS 113A Drain-source on-state resistance RDS(on) = f (Tj) Parameter: ID = – 5 A, VGS = 4.5 V Gate threshold voltage VGS(th) = f (Tj) Parameter: VDS = VGS, ID = – 1 mA Typ. transfer characteristic ID = f (VGS) Parameter: tp = 80 µs, VDS = – 25 V Typ. transconductance gfs = f (ID) Parameter: tp = 80 µs, VDS = – 25 V Semiconductor Group 6 BTS 113A Continuous drain current ID = f (TC) Parameter: VGS ≥ 4.5 V Forward characteristics of reverse diode IF = f (VSD) Parameter: Tj, tp = 80 µs Typ. gate-source leakage current IGSS = f (TC) Parameter: VGS = 10 V, VDS = 0 Typ. capacitances C = f (VDS) Parameter: VGS = 0, f = 1 MHz Semiconductor Group 7 BTS 113A Transient thermal impedance ZthJC = f (tp) Parameter: D = tp/T Semiconductor Group 8 BTS 113A Package Outlines TO 220 AB Standard Ordering Code C67078-S5015-A3 TO 220 AB Ordering Code SMD Version E 3045 A C67078-S5015-A4 (Tape & reel) 9.9 9.5 2.8 3.7 4.4 1.3 12.8 17.5 1 4.6 3) 9.2 1) 0.75 2.54 1.05 2.54 0.5 2.4 GPT05155 1) punch direction, burr max. 0.04 2) d.


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