TEMPFET(N-channel Enhancement mode Temperature sensor with thyristor characteristic)
TEMPFET® BTS 112 A
Features
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N channel Enhancement mode Temperature sensor with thyristor characteristic The dr...
Description
TEMPFET® BTS 112 A
Features
q q q q
N channel Enhancement mode Temperature sensor with thyristor characteristic The drain pin is electricalIy shorted to the tab
1 2 3
Pin
1 G
2 D
3 S
Type BTS 112A
VDS
60 V
ID
12 A
RDS(on)
0.15 Ω
Package TO-220AB
Ordering Code C67078-S5014-A3
Maximum Ratings Parameter Drain-source voltage Drain-gate voltage, RGS = 20 kΩ Gate-source voltage Continuous drain current, TC = 33 °C ISO drain current TC = 85 °C, VGS = 10 V, VDS = 0.5 V Pulsed drain current, Short circuit current, Symbol Values 60 60 ± 20 12 2.5 48 27 400 40 – 55 ... + 150 E 55/150/56 K/W ≤ 3.1 ≤ 75 °C – W A Unit V
VDS VDGR VGS ID ID-ISO ID puls ISC PSCmax Ptot Tj, Tstg
– –
TC = 25 °C Tj = – 55 ... + 150 °C
Short circuit dissipation, Tj = – 55 ... + 150 °C Power dissipation Operating and storage temperature range DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 Thermal resistance Chip-case Chip-ambient
Rth JC Rth JA
1
19.02.04
TEMPFET® BTS 112 A
Electrical Characteristics at Tj = 25 ˚C, unless otherwise specified. Parameter Symbol min. Static Characteristics Drain-source breakdown voltage Values typ. max. Unit
V(BR)DSS
60 – 3.0 – 3.5
V
VGS = 0, ID = 0.25 mA
Gate threshold voltage VGS = VDS, ID = 1.0 mA Zero gate voltage drain current VGS = 60 V, VDS = 0 Tj = 25 °C Tj = 150 °C Gate-source leakage current VGS = ± 20 V, VDS = 0 Tj = 25 °C Tj = 150 °C Drain-source on-state resistance VGS = 10 V, ID = 7.5 A Dynamic Characteristics Forward transc...
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