BTS100

Smart Highside Power Switch TEMPFET® Features q q q q BTS 100 P channel Enhancement mode Temperature sensor with thyristor characteristic The drain pin is electrically shorted to the tab Pin 1 G 2 D 3 S Type BTS 100 VDS – 50 V ID –8A RDS(on) 0.3 Ω Package TO-220AB Ordering Code C67078-A5007-A2 Maximum Ratings Parameter Drain-source voltage Drain-gate voltage, RGS = 20 kΩ Gate-source voltage Continuous drain current, TC = 30 °C ISO drain current TC = 85 ˚C, VGS = 10 V, VDS = 0.5 V Pulsed drain current, Short circuit current, Symbol Values – 50 – 50 ± 20 – 8.0 – 1.5 – 32 – 25 500 40 – 55 ... + 150 E 55/150/56 K/W ≤ 3.1 ≤ 75 °C – W A Unit V VDS VDGR VGS ID ID-ISO ID puls ISC PSCmax Ptot Tj, Tstg – – TC = 25 °C Tj = – 55 ... + 150 °C Short circuit dissipation, Tj = – 55 ... + 150 °C Power dissipation Operating and storage temperature range DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 Thermal resistance Chip-case Chip-ambient Rth JC Rth JA Semiconductor Group 1 04.96 BTS 100 Electrical Characteristics at Tj = 25 °C, unless otherwise specified. Parameter Symbol min. Static Characteristics Drain-source breakdown voltage VGS = 0, ID = – 0.25 mA Gate threshold voltage VGS = VDS, ID = – 1 mA Zero gate voltage drain current VGS = 0 V, VDS = – 50 V Tj = 25 °C Tj = 150 °C Gate-source leakage current VGS = – 20 V, VDS = 0 Tj = 25 °C Tj = 150 °C Drain-source on-state resistance VGS = – 10 V, ID = – 5 A Dynamic Characteristics Forward transcondu...