BTD4M

Ordering number :EN821C BTD4M Silicon Planar Type Bidirectional Diode Features · Small size and light weight. · DHD type package. Package Dimensions unit:mm 1107 [BTD4M] Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Peak Current Junction Temperature Storage Temperature Symbol IP Tj Tstg Conditions f=120Hz, pulse width 10µs Rationgs ±2 –40 to +125 –40 to +125 Unit A ˚C ˚C Electrical Characteristics at Ta = 25˚C Parameter Breakover Voltage Breakover Voltage Deviation Breakover Current Temperature Coefficient of Breakover Voltage Peak Output Voltage VP 5 Symbol VBO1(VBO2) ∆VBO |VBO1–VBO2| IBO1(IBO2) 0.1 Conditions Ratings min 29 typ max 37 3 50 Unit V V µA %/˚C V Basic Circuit Basic Characteristic SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 52098HA (KT)/4289MO/9284KI, TS No.821-1/2 BTD4M No products described or contained herein are intended for use in surgical implants, life-support systems, aerospace equipment, nuclear power control systems, vehicles, disaster/crime-prevention equipment and the like, the failure of which may directly or indirectly cause injury, death or property loss. Anyone purchasing any products described or contained herein for an above-mentioned use shall: Accept full responsibility and indemnify and defend SANYO ELECTRIC CO., LTD., its affiliates, subsidiaries and distributors and all their officers and employees, jointly and severa...