Document
Philips Semiconductors
Product specification
Three quadrant triacs high commutation
GENERAL DESCRIPTION
Glass passivated high commutation triacs in a plastic envelope intended for use in circuits where high static and dynamic dV/dt and high dI/dt can occur. These devices will commutate the full rated rms current at the maximum rated junction temperature, without the aid of a snubber.
BTA216 series B
QUICK REFERENCE DATA
SYMBOL VDRM IT(RMS) ITSM PARAMETER BTA216Repetitive peak off-state voltages RMS on-state current Non-repetitive peak on-state current MAX. MAX. MAX. UNIT 500B 500 16 140 600B 600 16 140 800B 800 16 140 V A A
PINNING - TO220AB
PIN 1 2 3 tab DESCRIPTION main terminal 1
PIN CONFIGURATION
tab
SYMBOL
T2
main terminal 2 gate main terminal 2
1 23
T1
G
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOL VDRM IT(RMS) ITSM PARAMETER Repetitive peak off-state voltages RMS on-state current Non-repetitive peak on-state current full sine wave; Tmb ≤ 99 ˚C full sine wave; Tj = 25 ˚C prior to surge t = 20 ms t = 16.7 ms t = 10 ms ITM = 20 A; IG = 0.2 A; dIG/dt = 0.2 A/µs CONDITIONS MIN. -500 5001 MAX. -600 6001 16 -800 800 UNIT V A
I2t dIT/dt IGM VGM PGM PG(AV) Tstg Tj
I2t for fusing Repetitive rate of rise of on-state current after triggering Peak gate current Peak gate voltage Peak gate power Average gate power Storage temperature Operating junction temperature
-
140 150 98 100 2 5 5 0.5 150 125
A A A2s A/µs A V W W ˚C ˚C
over any 20 ms period
-40 -
1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may switch to the on-state. The rate of rise of current should not exceed 15 A/µs. October 1997 1 Rev 1.200
Philips Semiconductors
Product specification
Three quadrant triacs high commutation
THERMAL RESISTANCES
SYMBOL Rth j-mb Rth j-a PARAMETER CONDITIONS MIN. -
BTA216 series B
TYP. 60
MAX. 1.2 1.7 -
UNIT K/W K/W K/W
Thermal resistance full cycle junction to mounting base half cycle Thermal resistance in free air junction to ambient
STATIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated SYMBOL IGT PARAMETER Gate trigger current
2
CONDITIONS VD = 12 V; IT = 0.1 A T2+ G+ T2+ GT2- GT2+ G+ T2+ GT2- G-
MIN. 2 2 2 0.25 -
TYP. 18 21 34 31 34 30 31 1.2 0.7 0.4 0.1
MAX. 50 50 50 60 90 60 60 1.5 1.5 0.5
UNIT mA mA mA mA mA mA mA V V V mA
IL
Latching current
VD = 12 V; IGT = 0.1 A
IH VT VGT ID
Holding current On-state voltage Gate trigger voltage Off-state leakage current
VD = 12 V; IGT = 0.1 A IT = 20 A VD = 12 V; IT = 0.1 A VD = 400 V; IT = 0.1 A; Tj = 125 ˚C VD = VDRM(max); Tj = 125 ˚C
DYNAMIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated SYMBOL dVD/dt dIcom/dt tgt PARAMETER Critical rate of rise of off-state voltage Critical rate of change of commutating current Gate controlled turn-on time CONDITIONS VDM = 67% VDRM(max); Tj = 125 ˚C; exponential waveform; gate open circuit VDM = 400 V; Tj = 125 ˚C; IT(RMS) = 16 A; without snubber; gate open circuit ITM = 20 A; VD = VDRM(max); IG = 0.1 A; dIG/dt = 5 A/µs MIN. 1000 TYP. 4000 28 2 MAX. UNIT V/µs A/ms µs
2 Device does not trigger in the T2-, G+ quadrant. October 1997 2 Rev 1.200
Philips Semiconductors
Product specification
Three quadrant triacs high commutation
BTA216 series B
25
Ptot / W
BT139
Tmb(max) / C = 180
95
20
IT(RMS) / A
BT139
20
1
120 90
101
99 C 15
15
60 30
107
10
113
10
5
5 119
0
0
5
10 IT(RMS) / A
15
125 20
0 -50
0
50 Tmb / C
100
150
Fig.1. Maximum on-state dissipation, Ptot, versus rms on-state current, IT(RMS), where α = conduction angle.
ITSM / A BTA216
Fig.4. Maximum permissible rms current IT(RMS) , versus mounting base temperature Tmb.
BT139
1000
50
IT(RMS) / A
40
dI T /dt limit 100
30
20
IT T 10 10us
I TSM time
10
Tj initial = 25 C max 100us 1ms T/s 10ms 100ms
0 0.01 0.1 1 surge duration / s 10
Fig.2. Maximum permissible non-repetitive peak on-state current ITSM, versus pulse width tp, for sinusoidal currents, tp ≤ 20ms.
ITSM / A BT139 IT T 100 ITSM time
Fig.5. Maximum permissible repetitive rms on-state current IT(RMS), versus surge duration, for sinusoidal currents, f = 50 Hz; Tmb ≤ 99˚C.
VGT(Tj) VGT(25 C)
150
1.6 1.4 1.2 1
BT136
Tj initial = 25 C max
50
0.8 0.6
0
1
10 100 Number of cycles at 50Hz
1000
0.4 -50
0
50 Tj / C
100
150
Fig.3. Maximum permissible non-repetitive peak on-state current ITSM, versus number of cycles, for sinusoidal currents, f = 50 Hz.
Fig.6. Normalised gate trigger voltage VGT(Tj)/ VGT(25˚C), versus junction temperature Tj.
October 1997
3
Rev 1.200
Philips Semiconductors
Product specification
Three quadrant triacs high commutation
BTA216 series B
3 2.5 2 1.5
IGT(Tj) IGT(25 C)
BTA216 T2+ G+ T2+ GT2- G-
50
IT / A Tj = 125 C Tj = 25 C
BT139
40
typ
Vo = 1.195 V Rs = 0.018 Ohms
max
30
20
1
10
0.5 0 -50
0 0 0.5 1 1.5 VT / V 2 2.5 3
0
50 Tj / C
100
150
Fig.7. Normalised gate trigger current IGT(Tj)/.