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DISCRETE SEMICONDUCTORS
DATA SHEET
BTA204S series D, E and F BTA204M series D, E and F Three quadrant triacs guaranteed commutation
Product specification December 1998
Philips Semiconductors
Product specification
Three quadrant triacs guaranteed commutation
GENERAL DESCRIPTION
Passivated guaranteed commutation triacs in a plastic envelope suitable for surface mounting, intended for use in motor control circuits or with other highly inductive loads. These devices balance the requirements of commutation performance and gate sensitivity. The "sensitive gate" E series and "logic level" D series are intended for interfacing with low power drivers, including micro controllers.
BTA204S series D, E and F BTA204M series D, E and F
QUICK REFERENCE DATA
SYMBOL PARAMETER MAX. MAX. 600D 600E 600F 600 4 25 MAX. UNIT 800E 800F 800 4 25 BTA204S (or BTA204M)- 500D BTA204S (or BTA204M)- 500E BTA204S (or BTA204M)- 500F Repetitive peak 500 off-state voltages RMS on-state current 4 Non-repetitive peak on-state 25 current
VDRM IT(RMS) ITSM
V A A
PINNING - SOT428
PIN Standard Alternative NUMBER S M 1 2 3 tab MT1 MT2 gate MT2 gate MT2 MT1 MT2
PIN CONFIGURATION
tab
SYMBOL
T2
T1
2 1 3
G
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOL VDRM IT(RMS) ITSM PARAMETER Repetitive peak off-state voltages RMS on-state current Non-repetitive peak on-state current full sine wave; Tmb ≤ 107 ˚C full sine wave; Tj = 25 ˚C prior to surge t = 20 ms t = 16.7 ms t = 10 ms ITM = 6 A; IG = 0.2 A; dIG/dt = 0.2 A/µs CONDITIONS MIN. -500 5001 MAX. -600 6001 4 -800 800 UNIT V A
It dIT/dt IGM VGM PGM PG(AV) Tstg Tj
2
I t for fusing Repetitive rate of rise of on-state current after triggering Peak gate current Peak gate voltage Peak gate power Average gate power Storage temperature Operating junction temperature
2
-
25 27 3.1 100 2 5 5 0.5 150 125
A A A2s A/µs A V W W ˚C ˚C
over any 20 ms period
-40 -
1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may switch to the on-state. The rate of rise of current should not exceed 6 A/µs.
December 1998
2
Rev 1.000
Philips Semiconductors
Product specification
Three quadrant triacs guaranteed commutation
THERMAL RESISTANCES
SYMBOL Rth j-mb Rth j-a PARAMETER CONDITIONS
BTA204S series D, E and F BTA204M series D, E and F
MIN. -
TYP. 75
MAX. 3.0 3.7 -
UNIT K/W K/W K/W
Thermal resistance full cycle junction to mounting base half cycle Thermal resistance pcb (FR4) mounted; footprint as in Fig.14 junction to ambient
STATIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated SYMBOL IGT PARAMETER Gate trigger current
2
CONDITIONS BTA204S (or BTA204M)VD = 12 V; IT = 0.1 A T2+ G+ T2+ GT2- GVD = 12 V; IGT = 0.1 A T2+ G+ T2+ GT2- GVD = 12 V; IGT = 0.1 A IT = 5 A VD = 12 V; IT = 0.1 A VD = 400 V; IT = 0.1 A; Tj = 125 ˚C VD = VDRM(max); Tj = 125 ˚C
MIN.
TYP. ...D
MAX. ...E 10 10 10 12 18 12 12 1.7 1.5 0.5 ...F 25 25 25 20 30 20 20
UNIT
0.25 -
1.4 0.7 0.4 0.1
5 5 5 6 9 6 6
mA mA mA mA mA mA mA V V V mA
IL
Latching current
IH VT VGT
Holding current On-state voltage Gate trigger voltage
ID
Off-state leakage current
DYNAMIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated SYMBOL dVD/dt dIcom/dt PARAMETER Critical rate of rise of off-state voltage CONDITIONS BTA204S (or BTA204M)...D MIN. ...E 30 2.0 ...F 50 2.5 V/µs A/ms TYP. MAX. UNIT
dIcom/dt
tgt
VDM = 67% VDRM(max); 20 Tj = 125 ˚C; exponential waveform; gate open circuit Critical rate of change VDM = 400 V; Tj = 125 ˚C; 1.0 of commutating current IT(RMS) = 4 A; dVcom/dt = 20V/µs; gate open circuit Critical rate of change VDM = 400 V; Tj = 125 ˚C; 5.0 of commutating current IT(RMS) = 4 A; dVcom/dt = 0.1V/µs; gate open circuit Gate controlled turn-on ITM = 12 A; VD = VDRM(max); time IG = 0.1 A; dIG/dt = 5 A/µs
-
-
-
-
A/ms
-
-
2
-
µs
2 Device does not trigger in the T2-, G+ quadrant.
December 1998
3
Rev 1.000
Philips Semiconductors
Product specification
Three quadrant triacs guaranteed commutation
BT136
BTA204S series D, E and F BTA204M series D, E and F
IT(RMS) / A BT136
8 7 6 5 4 3 2 1 0
Ptot / W
Tmb(max) / C
101 104
5
1
= 180 120 90 60 30
4
107 110 113 116 119
107 C
3
2
1
122 0 1 2 3 IT(RMS) / A 4 125 5
0 -50
0
50 Tmb / C
100
150
Fig.1. Maximum on-state dissipation, Ptot, versus rms on-state current, IT(RMS), where α = conduction angle.
Fig.4. Maximum permissible rms current IT(RMS) , versus mounting base temperature Tmb.
BT136
1000
ITSM / A
BT136 IT T ITSM
12 10
time
IT(RMS) / A
Tj initial = 25 C max 100 dIT /dt limit
8 6 4
T2- G+ quadrant
2
10 10us
100us
1ms T/s
10ms
100ms
0 0.01
0.1 1 surge duration / s
10
Fig.2. Maximum permissible non-repetitive peak on-state current ITSM, versus pulse width tp, for sinusoidal currents, tp ≤ 20ms.
Fig.5. Maximum permissible repetitive rms on-state current IT(RMS), versus surge duration, for sinusoidal currents, f = 50 Hz; Tmb ≤ 107˚C.
V.