BTA10GP

BTA10 GP TRIACS . . . . FEATURES LOW IH = 13mA max HIGH SURGE CURRENT : ITSM = 120A IGT SPECIFIED IN FOUR QUADRANTS INSULATING VOLTAGE = 2500V(RMS) (UL RECOGNIZED : E81734) DESCRIPTION The BTA10 GP’s use high performance, glass passivated chips. The insulated TO220AB package, the high surge current and low holding current make this family well adapted to LIGHT DIMMER applications. ABSOLUTE RATINGS (limiting values) Symbol IT(RMS) ITSM RMS on-state current (360° conduction angle) Non repetitive surge peak on-state current ( Tj initial = 25°C ) I2 t value Critical rate of rise of on-state current Gate supply : IG = 500mA diG/dt = 1A/µs Parameter A1 A2 G TO220AB (Plastic) Value Tc = 90 °C tp = 8.3 ms tp = 10 ms tp = 10 ms Repetitive F = 50 Hz Non Repetitive 10 126 120 72 10 50 - 40 to + 150 - 40 to + 125 260 Unit A A I2t dI/dt A2s A/µs Tstg Tj Tl Storage and operating junction temperature range Maximum lead temperature for soldering during 10 s at 4.5 mm from case °C °C °C Symbol Parameter 400 GP BTA10600 GP 600 Unit VDRM VRRM Repetitive peak off-state voltage Tj = 125 °C 400 V March 1995 1/4 BTA10 GP THERMAL RESISTANCES Symbol Rth (j-a) Junction to ambient Parameter Value 60 4 3 Unit °C/W °C/W °C/W Rth (j-c) DC Junction to case for DC Rth (j-c) AC Junction to case for 360 ° conduction angle ( F= 50 Hz) GATE CHARACTERISTICS (maximum values) PG (AV) = 1W PGM = 10W (tp = 20 µs) IGM = 4A (tp = 20 µs) VGM = 16V (tp = 20 µs). ELECTRICAL CHARACTERISTICS Symb...