K6R4008C1C

PRELIMINARY K6R4008C1C-C, K6R4008C1C-E, K6R4008C1C-I CMOS SRAM Document Title 512Kx8 Bit High Speed Static RAM(5V Operating). Operated at Extended and Industrial Temperature Ranges. Revision History RevNo. Rev. 0.0 Rev. 1.0 History Initial release with Preliminary. 1.1 Removed Low power Version. 1.2 Removed Data Retention Characteristics. 1.3 Changed ISB1 to 20mA 2.1 Relax D.C parameters. Item ICC 12ns 15ns 20ns Previous 170mA 165mA 160mA Current 195mA 190mA 185mA Draft Data Feb. 12. 1999 Mar. 29. 1999 Remark Preliminary Preliminary Rev. 2.0 Aug. 19. 1999 Preliminary 2.2 Relax Absolute Maximum Rating. Item Voltage on Any Pin Relative to Vss Rev. 3.0 3.1 Delete Preliminary 3.2 Update D.C parameters and 10ns part. ICC 195mA 190mA 185mA Previous Isb 70mA Isb1 20mA ICC 170mA 160mA 150mA 140mA Current Isb 60mA Isb1 10mA Previous -0.5 to 7.0 Current -0.5 to Vcc+0.5 Mar. 27. 2000 Final 10ns 12ns 15ns 20ns 3.3 Added Extended temperature range The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any questions, please contact the SAMSUNG branch office near your office, call or contact Headquarters. -1- Rev 3.0 March 2000 PRELIMINARY K6R4008C1C-C, K6R4008C1C-E, K6R4008C1C-I CMOS SRAM 512K x 8 Bit High-Speed CMOS Static RAM FEATURES Fast Access Time 10,12,15...