Document
BC 817-16W
NPN Silicon AF Transistor • For general AF applications • High collector current • High current gain • Low collector-emitter saturation voltage • Complementary types: BC807W, BC808W (PNP)
Type BC 817-16W BC 817-25W BC 817-40W BC 818-16W BC 818-25W BC 818-40W
Marking Ordering Code 6As 6Bs 6Cs 6Es 6Fs 6Gs Q62702-C2320 Q62702-C2278 Q62702-C2321 Q62702-C2322 Q62702-C2323 Q62702-C2324
Pin Configuration 1=B 1=B 1=B 1=B 1=B 1=B 2=E 2=E 2=E 2=E 2=E 2=E 3=C 3=C 3=C 3=C 3=C 3=C
Package SOT-323 SOT-323 SOT-323 SOT-323 SOT-323 SOT-323
Maximum Ratings Parameter Collector-emitter voltage BC 817 W BC 818 W Collector-base voltage BC 817 W BC 818 W Emitter-base voltage DC collector current Peak collector current Base current Total power dissipation, TS = 130°C Junction temperature Storage temperature Thermal Resistance Junction ambient
1)
Symbol
Values 45 25
Unit V
VCEO
VCBO
50 30
VEBO IC ICM IB Ptot Tj Tstg RthJA RthJS
1
5 500 1 100 250 150 - 65 ... + 150 ≤ 215 ≤ 80 mA A mA mW °C
K/W
Junction - soldering point
1) Package mounted on pcb 40mm x 40mm x 1.5mm / 0.5cm2 Cu
Semiconductor Group
Dec-19-1996
BC 817-16W
Electrical Characteristics at TA=25°C, unless otherwise specified Parameter Symbol min. DC Characteristics Collector-emitter breakdown voltage Values typ. max. Unit
V(BR)CEO
45 25 160 250 350 100 50 100
V
IC = 10 mA, IB = 0 , BC 817 W IC = 10 mA, IB = 0 , BC 818 W
Collector-base breakdown voltage
V(BR)CBO
50 30
IC = 10 µA, IB = 0 , BC 817 W IC = 10 µA, IB = 0 , BC 818 W
Base-emitter breakdown voltage
V(BR)EBO
5
IE = 10 µA, IC = 0
Collector-base cutoff current
ICBO
nA µA nA 100 160 250 60 100 170 250 400 630 V 0.7 1.2
VCB = 25 V, TA = 25 °C VCB = 25 V, TA = 150 °C
Emitter cutoff current
IEBO hFE
VEB = 4 V, IC = 0
DC current gain
IC = 100 mA, VCE = 1 V, BC ... 16 W IC = 100 mA, VCE = 1 V, BC ... 25 W IC = 100 mA, VCE = 1 V, BC ... 40 W IC = 300 mA, VCE = 1 V, BC ... 16 W IC = 300 mA, VCE = 1 V, BC ... 25 W IC = 300 mA, VCE = 1 V, BC ... 40 W
Collector-emitter saturation voltage 1)
VCEsat VBEsat
-
IC = 500 mA, IB = 50 mA
Base-emitter saturation voltage 1)
IC = 500 mA, IB = 50 mA 1) Pulse test: t < 300µs; D < 2%
Semiconductor Group
2
Dec-19-1996
BC 817-16W
NPN Silicon AF Transistor Electrical Characteristics at TA=25°C, unless otherwise specified Parameter Symbol min. AC Characteristics Transition frequency Values typ. max. Unit
fT
170 6 60 -
MHz pF -
IC = 50 mA, VCE = 5 V, f = 100 MHz
Collector-base capacitance
Ccb Ceb
-
VCB = 10 V, f = 1 MHz
Emitter-base capacitance
VEB = 0.5 V, f = 1 MHz
Semiconductor Group
3
Dec-19-1996
BC 817-16W
Total power dissipation Ptot = f (TA*;TS) * Package mounted on epoxy
Permissible Pulse Load RthJS = f(tp)
300
10 3 K/W
mW
Ptot
200
TS
RthJS
10 2
150
TA
10 1 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0
100 10 0 50
0 0 20 40 60 80 100 120 °C 150 TA ,TS
10 -1 -6 10
10
-5
10
-4
10
-3
10
-2
10 s 10 tp
-1
0
Permissible Pulse Load Ptotmax / PtotDC = f(tp) Collectot cutoff current ICBO = f (TA) VCB = 60V
10 3
-
Ptotmax/PtotDC
10 2 D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5
10 1
10 0 -6 10
10
-5
10
-4
10
-3
10
-2
10 s 10 tp
-1
0
Semiconductor Group
4
Dec-19-1996
BC 817-16W
DC current gain hFE = f (IC) VCE = 1V
Transition frequency fT = f (IC) VCE = 5V
Base-emitter saturation voltage IC = f (VBEsat), hFE = 10
Collector-emitter saturation voltage IC = f (VCEsat), hFE = 10
Semiconductor Group
5
Dec-19-1996
.