NPN Silicon AF Transistor (For general AF applications High collector current High current gain)
BC 817-16W
NPN Silicon AF Transistor • For general AF applications • High collector current • High current gain • Low co...
BC 817-16W
NPN Silicon AF
Transistor For general AF applications High collector current High current gain Low collector-emitter saturation voltage Complementary types: BC807W, BC808W (
PNP)
Type BC 817-16W BC 817-25W BC 817-40W BC 818-16W BC 818-25W BC 818-40W
Marking Ordering Code 6As 6Bs 6Cs 6Es 6Fs 6Gs Q62702-C2320 Q62702-C2278 Q62702-C2321 Q62702-C2322 Q62702-C2323 Q62702-C2324
Pin Configuration 1=B 1=B 1=B 1=B 1=B 1=B 2=E 2=E 2=E 2=E 2=E 2=E 3=C 3=C 3=C 3=C 3=C 3=C
Package SOT-323 SOT-323 SOT-323 SOT-323 SOT-323 SOT-323
Maximum Ratings Parameter Collector-emitter voltage BC 817 W BC 818 W Collector-base voltage BC 817 W BC 818 W Emitter-base voltage DC collector current Peak collector current Base current Total power dissipation, TS = 130°C Junction temperature Storage temperature Thermal Resistance Junction ambient
1)
Symbol
Values 45 25
Unit V
VCEO
VCBO
50 30
VEBO IC ICM IB Ptot Tj Tstg RthJA RthJS
1
5 500 1 100 250 150 - 65 ... + 150 ≤ 215 ≤ 80 mA A mA mW °C
K/W
Junction - soldering point
1) Package mounted on pcb 40mm x 40mm x 1.5mm / 0.5cm2 Cu
Semiconductor Group
Dec-19-1996
BC 817-16W
Electrical Characteristics at TA=25°C, unless otherwise specified Parameter Symbol min. DC Characteristics Collector-emitter breakdown voltage Values typ. max. Unit
V(BR)CEO
45 25 160 250 350 100 50 100
V
IC = 10 mA, IB = 0 , BC 817 W IC = 10 mA, IB = 0 , BC 818 W
Collector-base breakdown voltage
V(BR)CBO
50 30
IC = 10 µA, IB = 0 , BC 817 W IC = 10 µA, ...