NPN Silicon Digital Transistor (Switching circuit/ inverter/ interface circuit/ driver circuit)
BCR 119W
NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias...
BCR 119W
NPN Silicon Digital
Transistor Switching circuit, inverter, interface circuit, driver circuit Built in bias resistor (R1=4.7kΩ)
Type BCR 119W
Marking Ordering Code WKs Q62702-C2285
Pin Configuration 1=B 2=E 3=C
Package SOT-323
Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Input on Voltage DC collector current Total power dissipation, TS = 124°C Junction temperature Storage temperature Symbol Values 50 50 5 15 100 250 150 - 65 ... + 150 mA mW °C Unit V
VCEO VCBO VEBO Vi(on) IC Ptot Tj Tstg
Thermal Resistance Junction ambient
1)
RthJA RthJS
≤ 240 ≤ 105
K/W
Junction - soldering point
1) Package mounted on pcb 40mm x 40mm x 1.5mm / 0.5cm2 Cu
Semiconductor Group
1
Dec-05-1996
BCR 119W
Electrical Characteristics at TA=25°C, unless otherwise specified Parameter Symbol min. DC Characteristics Collector-emitter breakdown voltage Values typ. max. Unit
V(BR)CEO
50 4.7 -
V
IC = 100 µA, IB = 0
Collector-base breakdown voltage
V(BR)CBO
50
IC = 10 µA, IB = 0
Base-emitter breakdown voltage
V(BR)EBO
5
IE = 10 µA, IC = 0
Collector cutoff current
ICBO
100
nA 120 630 V 0.3 0.8 1.1 6.2 kΩ
VCB = 40 V, IE = 0
DC current gain
hFE VCEsat Vi(off)
0.4
IC = 5 mA, VCE = 5 V
Collector-emitter saturation voltage 1)
IC = 10 mA, IB = 0.5 mA
Input off voltage
IC = 100 µA, VCE = 5 V
Input on Voltage
Vi(on)
0.5
IC = 2 mA, VCE = 0.3 V
Input resistor
R1
3.2
AC Characteristics Transition frequency
fT
150 3 -
MHz pF ...