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Q62702-C1890 Dataheets PDF



Part Number Q62702-C1890
Manufacturers Siemens Semiconductor Group
Logo Siemens Semiconductor Group
Description PNP Silicon AF Transistors (For AF input stages and driver applications High current gain)
Datasheet Q62702-C1890 DatasheetQ62702-C1890 Datasheet (PDF)

PNP Silicon AF Transistors BCW 61 BCX 71 q q q q q For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Low noise between 30 Hz and 15 kHz Complementary types: BCW 60, BCX 70 (NPN) Type BCW 61 A BCW 61 B BCW 61 C BCW 61 D BCW 61 FF BCW 61 FN BCX 71G BCX 71H BCX 71J BCX 71 K Marking BAs BBs BCs BDs BFs BNs BGs BHs BJs BKs Ordering Code (tape and reel) Q62702-C452 Q62702-C1585 Q62702-C1478 Q62702-C1556 Q62702-C1890 Q62702-C1891 Q62702-C1482 Q.

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PNP Silicon AF Transistors BCW 61 BCX 71 q q q q q For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Low noise between 30 Hz and 15 kHz Complementary types: BCW 60, BCX 70 (NPN) Type BCW 61 A BCW 61 B BCW 61 C BCW 61 D BCW 61 FF BCW 61 FN BCX 71G BCX 71H BCX 71J BCX 71 K Marking BAs BBs BCs BDs BFs BNs BGs BHs BJs BKs Ordering Code (tape and reel) Q62702-C452 Q62702-C1585 Q62702-C1478 Q62702-C1556 Q62702-C1890 Q62702-C1891 Q62702-C1482 Q62702-C1586 Q62702-C1554 Q62702-C1654 Pin Configuration 1 2 3 B E C Package1) SOT-23 1) For detailed information see chapter Package Outlines. Semiconductor Group 1 5.91 BCW 61 BCX 71 Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Peak collector current Peak base current Total power dissipation, TS = 71 ˚C Junction temperature Storage temperature range Thermal Resistance Junction - ambient1) Junction - soldering point Rth JA Rth JS ≤ ≤ Symbol BCW 61 VCE0 VCB0 VEB0 IC ICM IBM Ptot Tj Tstg 32 32 Values BCW 61 FF BCX 71 32 32 5 100 200 200 330 150 – 65 … + 150 45 45 Unit V mA mW ˚C 310 240 K/W 1) Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu. Semiconductor Group 2 BCW 61 BCX 71 Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Parameter Symbol min. DC characteristics Collector-emitter breakdown voltage IC = 10 mA BCW 61, BCW 61 FF BCX 71 Collector-base breakdown voltage IC = 10 µA BCW 61, BCW 61 FF BCX 71 Emitter-base breakdown voltage IE = 1 µA Collector cutoff current VCB = 32 V VCB = 45 V VCB = 32 V, TA = 150 ˚C VCB = 45 V, TA = 150 ˚C Emitter cutoff current VEB = 4 V DC current gain 1) IC = 10 µA, VCE = 5 V BCW 61 A, BCX 71 G BCW 61 B, BCX 71 H BCW 61 FF, BCW 61 C, BCX 71 J BCW 61 FN, BCW 61 D, BCX 71 K IC = 2 mA, VCE = 5 V BCW 61 A, BCX 71 G BCW 61 B, BCX 71 H BCW 61 FF, BCW 61 C, BCX 71 J BCW 61 FN, BCW 61 D, BCX 71 K IC = 50 mA, VCE = 1 V BCW 61 A, BCX 71 G BCW 61 B, BCX 71 H BCW 61 FF, BCW 61 C, BCX 71 J BCW 61 FN, BCW 61 D, BCX 71 K BCW 61, BCW 61 FF BCX 71 BCW 61, BCW 61 FF BCX 71 IEB0 hFE 20 30 40 100 120 180 250 380 60 80 100 110 140 200 300 460 170 250 350 500 – – – – – – – – 220 310 460 630 – – – – V(BR)CE0 32 45 V(BR)CB0 32 45 V(BR)EB0 ICB0 – – – – – – – – – – 20 20 20 20 20 nA nA µA µA nA – 5 – – – – – – – – – – V Values typ. max. Unit 1) Pulse test: t ≤ 300 µs, D ≤ 2 %. Semiconductor Group 3 BCW 61 BCX 71 Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Parameter Symbol min. DC characteristics Collector-emitter saturation voltage1) IC = 10 mA, IB = 0.25 mA IC = 50 mA, IB = 1.25 mA Base-emitter saturation voltage1) IC = 10 mA, IB = 0.25 mA IC = 50 mA, IB = 1.25 mA Base-emitter voltage 1) IC = 10 µA, VCE = 5 V IC = 2 mA, VCE = 5 V IC = 50 mA, VCE = 1 V AC characteristics Transition frequency IC = 20 mA, VCE = 5 V, f = 100 MHz Output capacitance VCB = 10 V, f = 1 MHz Input capacitance VCB = 0.5 V, f = 1 MHz Short-circuit input impedance IC = 2 mA, VCE = 5 V, f = 1 kHz BCW 61 A, BCX 71 G BCW 61 B, BCX 71 H BCW 61 FF, BCW 61 C, BCX 71 J BCW 61 FN, BCW 61 D, BCX 71 K Open-circuit reverse voltage transfer ratio IC = 2 mA, VCE = 5 V, f = 1 kHz BCW 61 A, BCX 71 G BCW 61 B, BCX 71 H BCW 61 FF, BCW 61 C, BCX 71 J BCW 61 FN, BCW 61 D, BCX 71 K fT Cobo Cibo h11e – – – – h12e – – – 1.5 2.0 2.0 3.0 – – – 2.7 3.6 4.5 7.5 – – – – 10– 4 – – – 250 3 8 – – – kΩ MHz pF VCEsat – – VBEsat – – VBE (on) – 0.55 – 0.52 0.65 0.78 – 0.75 – 0.70 0.83 0.85 1.05 0.12 0.20 0.25 0.55 V Values typ. max. Unit 1) Pulse test: t ≤ 300 µs, D ≤ 2 %. Semiconductor Group 4 BCW 61 BCX 71 Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Parameter Symbol min. AC characteristics Short-circuit forward current transfer ratio IC = 2 mA, VCE = 5 V, f = 1 kHz BCW 61 A, BCX 71 G BCW 61 B, BCX 71 H BCW 61 FF, BCW 61 C, BCX 71 J BCW 61 FN, BCW 61 D, BCX 71 K Open-circuit output admittance IC = 2 mA, VCE = 5 V, f = 1 kHz BCW 61 A, BCX 71 G BCW 61 B, BCX 71 H BCW 61 FF, BCW 61 C, BCX 71 J BCW 61 FN, BCW 61 D, BCX 71 K Noise figure IC = 0.2 mA, VCE = 5 V, RS = 2 kΩ f = 1 kHz, ∆f = 200 Hz BCW 61 A to BCX 71 K BCW 61 FF, BCW 61 FN Equivalent noise voltage IC = 0.2 mA, VCE = 5 V, RS = 2 kΩ f = 10 Hz … 50 Hz BCW 61 FF, BCW 61 FN h21e – – – – h22e – – – – F 18 24 30 50 – – – – dB 200 260 330 520 – – – – µs Values typ. max. Unit – – – Vn – 2 1 – – 2 0.11 µV Semiconductor Group 5 BCW 61 BCX 71 Total power dissipation Ptot = f (TA*; TS) * Package mounted on epoxy Collector-base capacitance CCB0 = f (VCB0) Emitter-base capacitance CEB0 = f (VEB0) Permissible pulse load Ptot max/Ptot DC = f (tp) Transition frequency fT = f (IC) VCE = 5 V Semiconductor Group 6 BCW 61 BCX 71 Base-emitter saturation voltage IC = f (VBEsat) hFE = 40 Collector-emitter saturation voltage IC = f (VCEsat) hFE = 40 Collector current IC = f (VBE) VCE = 5 V DC current gain hFE = f (IC) VCE = 5 V Semico.


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