Q62702-C1475

PNP Silicon Darlington Transistors BCV 26 BCV 46 For general AF applications q High collector current q High current gain q Complementary types: BCV 27, BCV 47 (NPN) q Type BCV 26 BCV 46 Marking FDs FEs Ordering Code (tape and reel) Q62702-C1493 Q62702-C1475 Pin Configuration 1 2 3 B E C Package1) SOT-23 Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Peak collector current Base current Peak base current Total power dissipation, TS = 74 ˚C Junction temperature Storage temperature range Thermal Resistance Junction - ambient2) Junction - soldering point Rth JA Rth JS ≤ ≤ Symbol VCE0 VCB0 VEB0 IC ICM IB IBM Ptot Tj Tstg Values BCV 26 30 40 10 Unit BCV 46 60 80 10 500 800 100 200 360 150 – 65 … + 150 mW ˚C mA V 280 210 K/W 1) 2) For detailed information see chapter Package Outlines. Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu. Semiconductor Group 1 5.91 BCV 26 BCV 46 Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Parameter Symbol min. DC characteristics Collector-emitter breakdown voltage IC = 10 mA BCV 26 BCV 46 Collector-base breakdown voltage IC = 100 µA BCV 26 BCV 46 Emitter-base breakdown voltage, IE = 10 µA Collector cutoff current VCB = 30 V VCB = 60 V VCB = 30 V, TA = 150 ˚C VCB = 60 V, TA = 150 ˚C Emitter cutoff current, VEB = 4 V DC current gain1) IC = 100 µA, VCE = 1 V IC = 10 mA, VCE = 5 V IC = 100 mA, VCE = 5 V IC = 0.5 A, VCE = 5 V BCV 26 BCV...