Silicon Tuning Diode (Extended frequency range up to 2.8 Ghz ; special design for use in TV-sat indoor units)
Silicon Tuning Diode
BB 835
Preliminary data
Features
q
Extended frequency range up to 2.8 Ghz ; special design for ...
Description
Silicon Tuning Diode
BB 835
Preliminary data
Features
q
Extended frequency range up to 2.8 Ghz ; special design for use in TV-sat indoor units High capacitance ratio
q
Type BB 835
Marking yellow X
Ordering Code (tape and reel) Q62702-B802
Pin Configuration 1 C 2 A
Package SOD-323
Maximum Ratings Parameter Reverse voltage Reverse voltage Forward current Operating temperature range Storage temperature range Thermal Resistance Junction - ambient 1)
Rth JA
Symbol
VR
Values 30 35 20 – 55… +150 – 55… +150 ≤ 450
Unit V V mA °C °C
(R ≥ 5 kΩ)
VRM IF TOP Tstg
K/W
1)
For detailed informatioon see chapter Package Outline
Semiconductor Group
1
04.96
BB 835
Electrical Characteristics at TA = 25 °C, unless otherwise specified. Parameter Symbol min. DC Characteristics Reverse current VR = 30 V VR = 30 V, TA = 85 °C Diode capacitance VR = 1 V, f = 1 MHz VR = 28 V, f = 1 MHz Capacitance ratio VR = 1 V, 28 V, f = 1 MHz Capacitance matching VR = 1…28 V, f = 1 MHz Series resistance VR = 1 V, f = 470 MHz Series inductance Diode capacitance CT = f (VR) f = 1 MHz.
IR
Value typ. max.
Unit
nA – – – – 9.1 0.62 14.7 – 2.4 1.4 10 200 pF 8.5 0.5 10 0.75 – 13.5 – % – 3 Ω – – – nH –
CT
CT1/CT28 ∆CT/CT rS LS
Semiconductor Group
2
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