Q62702-B683

BB 619C Silicon Variable Capacitance Diode For tuning of extended frequency band in VHF TV/ VTR tuners Type BB 619C Marking Ordering Code yellow S Q62702-B683 Pin Configuration 1=C 2=A Package SOD-123 Maximum Ratings Parameter Diode reverse voltage Peak reverse voltage (R ≥ 5kΩ) Forward current Operating temperature range Storage temperature Thermal Resistance Junction - ambient Symbol Values 30 35 20 - 55 ... + 125 - 55 ... + 150 mA °C Unit V VR VRM IF Top Tstg RthJA ≤ 450 K/W Semiconductor Group 1 Jan-08-1997 BB 619C Electrical Characteristics at TA=25°C, unless otherwise specified Parameter Symbol min. DC characteristics Reverse current Values typ. max. Unit IR 10 200 nA VR = 30 V, TA = 25 °C VR = 30 V, TA = 85 °C AC characteristics Diode capacitance CT 36 27 2.5 2.4 39 30.2 2.72 2.55 11.1 15.3 0.6 2.5 42 33.2 3.05 2.8 pF VR = 1 V, f = 1 MHz VR = 2 V, f = 1 MHz VR = 25 V, f = 1 MHz VR = 28 V, f = 1 MHz Capacitance ratio CT2/CT25 9.5 - - VR = 2 V, VR = 25 V, f = 1 MHz Capacitance ratio CT1/CT28 13.5 ∆CT/CT 2.5 Ω nH % VR = 1 V, VR = 28 V, f = 1 MHz Capacitance matching VR = 28 V, f = 1 MHz Series resistance rs Ls VR = 5 V, f = 470 MHz Series inductance Semiconductor Group 2 Jan-08-1997 BB 619C Diode capacitance CT = f (VR) f = 1MHz Temperature coefficient of the diode capacitance TCc = f (VR) f = 1MHz 10 -1 1/°C 40 pF CT 30 TCc 10 -2 25 10 -3 20 15 10 -4 10 5 0 0 5 10 15 20 V 30 10 -5 0 10 10 1 V VR VR Reverse current IR = ...