Silicon Tuning Diode (High Q hyperabrupt tuning diode Low series inductance)
BBY 51-02W
Silicon Tuning Diode Preliminary data • High Q hyperabrupt tuning diode • Low series inductance • Designed fo...
Description
BBY 51-02W
Silicon Tuning Diode Preliminary data High Q hyperabrupt tuning diode Low series inductance Designed for low tuning voltage operation For VCO’s in mobile communications equipment
2
1
VES05991
Type BBY 51-02W
Marking I
Ordering Code Q62702-B0858
Pin Configuration 1=C 2=A
Package SCD-80
Maximum Ratings Parameter Diode reverse voltage Forward current Operating temperature range Storage temperature Symbol Value 7 20 -55 ...+150 -55 ...+150 Unit V mA °C
VR IF T op T stg
Semiconductor Group Semiconductor Group
11
Jul-23-1998 1998-11-01
BBY 51-02W
Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values min. DC characteristics Reverse current typ. max. 10 100
Unit
IR IR
-
nA
VR = 6 V
Reverse current
VR = 6 V, TA = 65 °C
AC characteristics Diode capacitance
CT
4.5 3.4 2.7 2.5 5.3 4.2 3.5 3.1 1.75 1.78 0.5 0.37 0.09 0.6 6.1 5.2 4.6 3.7 2.2 2.2 0.7 -
pF
VR = 1 V, f = 1 MHz VR = 2 V, f = 1 MHz VR = 3 V, f = 1 MHz VR = 4 V, f = 1 MHz
Capacitance ratio
CT1/C T4 C1V-C 3V C3V-C 4V rs CC Ls
1.55 1.4 0.3 -
pF
VR = 1 V, VR = 4 V, f = 1 MHz
Capacitance difference
VR = 1 V, VR = 3 V, f = 1 MHz
Capacitance difference
VR = 3 V, VR = 4 V, f = 1 MHz
Series resistance Ω pF nH
VR = 1 V, f = 1 GHz
Case capacitance
f = 1 MHz
Series inductance chip to ground
Semiconductor Group Semiconductor Group
22
Jul-23-1998 1998-11-01
BBY 51-02W
Diode capacitance CT = f (V R) f = 1MHz
EHD07128
Temperature coefficient TCc = f...
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