Silicon Schottky Diode
Preliminary Data Low-power Schottky rectifier diode q For low-loss, fast-recovery rectification, ...
Silicon
Schottky Diode
Preliminary Data Low-power
Schottky rectifier diode q For low-loss, fast-recovery rectification, meter protection, bias isolation and clamping purposes
q
BAT 66-05
Type BAT 66-05
Marking BAT 66-05
Ordering Code (tape and reel) Q62702-A988
Pin Configuration
Package1) SOT-223
Maximum Ratings Parameter Reverse voltage Forward current Average forward current, 50 Hz Surge forward current, t ≤ 10 ms Total power dissipation, TS ≤ 126 ˚C Junction temperature Storage temperature range Thermal Resistance Junction - ambient2) Junction - soldering point Rth JA Rth JS
≤ ≤
Symbol VR IF IFAV IFSM Ptot Tj Tstg
Values 40 2 1 10 1.2 150 – 55 … + 150
Unit V A
W ˚C
160 20
K/W
1) 2)
For detailed information see chapter Package Outlines. Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu.
Semiconductor Group
1
5.91
BAT 66-05
Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Parameter Reverse current VR = 25 V VR = 25 V, TA = 85 ˚C Forward voltage IF = 10 mA IF = 100 mA IF = 1 A Diode capacitance VR = 10 V, f = 1 MHz Symbol min. IR – – VF – – – CT – 0.28 0.35 0.47 30 0.35 – 0.60 40 pF – – 10 1 Values typ. max.
µA mA
Unit
V
Forward current IF = f (VF)
Reverse current IR = f (VR)
Semiconductor Group
2
BAT 66-05
Forward current IF = f (TA*; TS) * Package mounted on epoxy
Semiconductor Group
3
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