Q62702-A77

Silicon Switching Diode Array For high-speed switching q Electrically insulated diodes q BAS 28 Type BAS 28 Marking JTs Ordering Code (tape and reel) Q62702-A77 Pin Configuration Package1) SOT-143 Maximum Ratings Parameter Reverse voltage Peak reverse voltage Forward current Surge forward current, t = 1 µs Total power dissipation, TS = 31 ˚C Junction temperature Storage temperature range Thermal Resistance Junction - ambient2) Junction - soldering point Rth JA Rth JS ≤ ≤ Symbol VR VRM IF IFS Ptot Tj Tstg Values 75 85 200 4.5 330 150 – 65 … + 150 Unit V mA A mW ˚C 500 360 K/W 1) 2) For detailed information see chapter Package Outlines. Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu. Semiconductor Group 1 5.91 BAS 28 Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Parameter Symbol min. DC characteristics Breakdown voltage I(BR) = 100 µA Forward voltage IF = 1 mA IF = 10 mA IF = 50 mA IF = 150 mA Reverse current VR = 75 V VR = 25 V, TA = 150 ˚C VR = 75 V, TA = 150 ˚C AC characteristics Diode capacitance VR = 0 V, f = 1 MHz Reverse recovery time IF = 10 mA, IR = 10 mA, RL = 100 Ω measured at IR = 1 mA Test circuit for reverse recovery time CD trr – – – – 2 6 pF ns V(BR) VF – – – – IR – – – – – – 1 30 50 – – – – 715 855 1000 1250 µA Values typ. max. Unit 85 – – V mV Pulse generator: tp = 100 ns, D = 0.05 tr = 0.6 ns, Rj = 50 Ω Oscillograph: R = 50 Ω tr = 0.35 ns C ≤ 1 pF Semiconductor Group 2 BAS 28 Forward curren...