Silicon Schottky Diode (Rectifier Schottky diode for mobile communication Low voltage high inductane For power supply
BAT 60B
Silicon Schottky Diode • Rectifier Schottky diode for mobile communication • Low voltage high inductane • For po...
BAT 60B
Silicon
Schottky Diode Rectifier
Schottky diode for mobile communication Low voltage high inductane For power supply For clamping and proptection in low voltage application For detection and step-up-conversion
2
1
VPS05176
ESD: Electrostatic discharge sensitive device, observe handling precaution! Type BAT 60B Marking blue/5 Ordering Code Q62702-A1189 Pin Configuration 1=C 2=A Package SOD-323
Maximum Ratings Parameter Diode reverse voltage Forward current Surge forward current (t < 100µs) Total power dissipation, T S = 28 °C Junction temperature Storage temperature Maximum Ratings Junction - ambient
1)
Symbol
Value 10 3 5 1350 150 - 55 ...+150
Unit V A mA mW °C
VR IF IFSM Ptot Tj Tstg
RthJA RthJS
≤ 160 ≤ 90
K/W
Junction - soldering point
1) Package mounted on epoxy pcb 40mm x 40mm x 1.5mm / 0.5cm 2 Cu Semiconductor Group Semiconductor Group 11
Sep-04-1998 1998-11-01
BAT 60B
Electrical Characteristics at TA = 25 °C, unless otherwise specified. Parameter DC characteristics Reverse current Symbol min. Values typ. max. µA 5 10 100 410 0.24 0.3 0.4 V Unit
IR
VR = 5 V VR = 8 V
Reverse current
IR
-
VR = 5 V, TA = 80 °C VR = 8 V, TA = 80 °C
Forward voltage
VF
I F = 10 mA I F = 100 mA I F = 1000 mA
AC characteristics Diode capacitance
CT
-
20
-
pF
VR = 5 V, f = 1 MHz
Semiconductor Group Semiconductor Group
22
Sep-04-1998 1998-11-01
BAT 60B
Forward current IF = f (TA*;TS) * Package mounted on epoxy
Reverse current IR = f (TA)
VR = 8V...