Silicon Schottky Diode (General-purpose diode for high-speed switching Circuit protection Voltage clamping High-level detecting and mixing)
BAS70-07W
Silicon Schottky Diode • General-purpose diode for high-speed switching • Circuit protection • Voltage clampin...
BAS70-07W
Silicon
Schottky Diode General-purpose diode for high-speed switching Circuit protection Voltage clamping High-level detecting and mixing
3 4
2 1
VPS05605
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type BAS70-07W
Marking Ordering Code 77s Q62702-A1186
Pin Configuration
Package
1 = C1 2 = C2 3 = A2 4 = A1 SOT-343
Maximum Ratings Parameter Diode reverse voltage Forward current Surge forward current (t< 100µs) Total power dissipation, T S ≤ 91 °C Junction temperature Operating temperature range Storage temperature Symbol Value 70 70 100 250 150 - 55 ...+150 - 55 ...+150 mW °C Unit V mA
VR IF I FSM Ptot Tj T op T stg
Maximum Ratings Junction - ambient
1)
RthJA RthJS
≤ 285 ≤ 145
K/W
Junction - soldering point
1) Package mounted on epoxy pcb 40mm x 40mm x 1.5mm / 0.5cm 2 Cu Semiconductor Group Semiconductor Group 11
Ma 1998-11-01 -26-1998
BAS70-07W
Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter DC characteristics Breakdown voltage Symbol min. Values typ. 0.1 10 max. V µA Unit
V(BR) IR
70 -
I (BR) = 10 µA
Reverse current
VR = 50 V VR = 70 V
Forward voltage
VF
300 600 750 375 705 880 410 750 1000
V
I F = 1 mA I F = 10 mA I F = 15 mA
AC characteristics Diode capacitance
CT
τ
-
1.5 34 2
2 100 -
pF ps Ω nH
VR = 0 V, f = 1 MHz
Charge carrier life time
I F = 25 mA
Differential forward resistance
rf Ls
I F = 10 mA, f = 10 kHz
Series inductance
Semiconductor Group Semicondu...