Q62702-A1067

Silicon Schottky Diode q q q q BAS 40W General-purpose diodes for high-speed switching Circuit protection Voltage clamping High-level detecting and mixing Type Ordering Code (tape and reel) Q62702-A1065 Q62702-A1066 Q62702-A1067 Pin Configuration 1 2 3 A1 A1 C1 C1 A2 C2 Marking Package1) BAS 40-04W BAS 40-05W BAS 40-06W C1/A2 44s C1/C2 45s A1/A2 46s SOT-323 Maximum Ratings Parameter Reverse voltage Forward current Surge forward current, t ≤ 10 ms Total power dissipation TS ≤ 106 °C Junction temperature Operating temperature range Storage temperature range Thermal Resistance Junction-ambient2) Junction-soldering point Symbol Values 40 120 200 250 150 – 55 … + 150 – 55 … + 150 Unit V mA mA mW °C °C °C VR IF IFSM Ptot Tj Top Tstg Rth JA Rth JS ≤ 395 ≤ 175 K/W K/W 1) For detailed information see chapter Package Outlines. 2) Package mounted on an epoxy pcb 40 mm x 40 mm x 1.5 mm/1 cm2 Cu. Semiconductor Group 1 02.96 BAS 40W Electrical Characteristics at TA = 25 °C, unless otherwise specified. Parameter Symbol min. DC Characteristics Breakdown voltage I(BR) = 10 µA Forward voltage IF = 1 mA IF = 10 mA IF = 15 mA Reverse current VR = 30 V VR = 40 V Diode capacitance VR = 0 V, f = 1 MHz Charge carrier life time IF = 25 mA Differential forward resistance Value typ. max. Unit V(BR) 40 – 310 450 720 – – 3 10 10 2 – V mV 250 350 600 380 500 1000 µA – – 1 10 pF – 5 – – – nH ps Ω – – – VF IR CT τ RF LS IF = 10 mA, f = 10 kHz Series inductance Semiconductor Group ...