BAT 62-02W
Silicon Schottky Diode • Low barrier diode for detectors up to GHz frequencies
2
1
VES05991
ESD: Electros...
BAT 62-02W
Silicon
Schottky Diode Low barrier diode for detectors up to GHz frequencies
2
1
VES05991
ESD: Electrostatic discharge sensitive device, observe handling precaution
Type BAT 62-02W
Marking Ordering Code L Q62702-A1028
Pin Configuration 1=C 2=A
Package SCD-80
Maximum Ratings Parameter Diode reverse voltage Forward current Junction temperature Storage temperature Symbol Value 40 40 150 -55 ...+150 Unit V mA °C
VR IF Tj Tstg
Thermal Resistance Junction - ambient
1)
RthJA RthJS
≤ 650 ≤ 810
K/W
Junction - soldering point
1) Package mounted on epoxy pcb 15mm x 16.7mm x 0.7mm Semiconductor Group Semiconductor Group 11
Jul-02-1998 1998-11-01
BAT 62-02W
Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values min. DC characteristics Reverse current typ. 0.58 max. 10 1
Unit
IR VF
-
µA V
VR = 40 V
Forward voltage
I F = 2 mA
AC characteristics Diode capacitance
CT CC R0 Ls
-
0.35 0.09 225 0.6
0.6 -
pF
VR = 1 V, f = 1 MHz
Case capacitance
f = 1 MHz
Differential resistance kΩ nH
VR = 0 , f = 10 kHz
Series inductance chip to ground
Semiconductor Group Semiconductor Group
22
Jul-02-1998 1998-11-01
BAT 62-02W
Forward current IF = f (TA*;TS) * Package mounted on epoxy
50
mA
IF TA
30
TS
20
10
0 0
20
40
60
80
100
120 °C
150
TA,TS
Permissible Pulse Load R thJS = f(t p)
Permissible Pulse Load
IFmax / IFDC = f(tp)
10 3 10 1
K/W
RthJS
IFmax / IFDC
10 2
-
0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0...