Silicon Schottky Diode (Low barrier diode for mixer and detectors up to GHz frequencies)
Silicon Schottky Diode
BAT 63
q
Low barrier diode for mixer and detectors up to GHz frequencies
Type
Ordering Code ...
Silicon
Schottky Diode
BAT 63
q
Low barrier diode for mixer and detectors up to GHz frequencies
Type
Ordering Code (tape and reel) Q62702-A1004
1 A1
Pin Configuration 2 3 4 C2 A2 C1
Marking
Package
BAT 63
63
SOT-143
Maximum Ratings Parameter Reverse voltage Forward current Junction temperature Storage temperature range Thermal Resistance Junction-ambient1) Symbol Values 3 100 150 – 55 … + 150 Unit V mA °C °C
VR IF Tj Tstg
Rth JA
≤ 450
K/W
1) Package mounted on aluminum 15 mm x 16.7 mm x 0.7 mm.
Semiconductor Group
1
10.94
BAT 63
Electrical Characteristics at TA = 25 °C, unless otherwise specified. Parameter Symbol min. DC Characteristics Reverse current VR = 3 V Forward voltage IF = 1 mA Diode capacitance VR = 0.2 V, f = 1 MHz Case capacitance Differential resistance V = 0, f = 10 kHz Series inductance Value typ. max. Unit
IR
– – 190 0.65 0.1 30 2 10
nA mV – 300 pF – 0.85 pF – – kΩ – – nH – –
VF CT CC R0 LS
Semiconductor Group
2
BAT 63
Forward current IF = f (VF)
Forward current IF = f (TS; TA)
Permissible Pulse load RthJS = f (tp)
TA = 25 °C
Permissible Pulse load IFmax / IFDC = f (tp)
Semiconductor Group
3
...