Silicon Schottky Diode (DBS mixer application to 12 GHz Low noise figure Medium barrier type)
Silicon Schottky Diode
Preliminary Data DBS mixer application to 12 GHz q Low noise figure q Medium barrier type
q
BAT ...
Silicon
Schottky Diode
Preliminary Data DBS mixer application to 12 GHz q Low noise figure q Medium barrier type
q
BAT 14-098
ESD: Electrostatic discharge sensitive device, observe handling precautions! Type BAT 14-098 Marking Ordering Code (tape and reel) white A Q62702-A0960 Pin Configuration Package1) SOD-123
Maximum Ratings Parameter Reverse voltage Forward current Power dissipation, TS ≤ 80 ˚C Storage temperature range Operating temperature range Thermal Resistance Junction – ambient2) Junction – soldering point Rth JA Rth JS
≤ ≤
Symbol VR IF Ptot Tstg Top
Values 4 90 100 – 55 … + 150
Unit V mA mW
– 55 … + 150 ˚C
770 690
K/W
1) 2)
For detailed information see chapter Package Outlines. Package mounted on alumina 15 mm × 16.7 mm × 0.7 mm.
Semiconductor Group
1
07.94
BAT 14-098
Electrical Characteristics per Diode at TA = 25 ˚C, unless otherwise specified. Parameter Breakdown voltage IR = 5 µA Forward voltage IF = 1 mA IF = 10 mA Forward voltage matching IF = 10 mA Diode capacitance VR = 0, f = 1 MHz Forward resistance IF = 10 mA / 50 mA Symbol min. VBR VF – –
∆VF
Values typ. – max. – 4
Unit V
0.43 0.55 – – 5.5
– – 10 0.35 – mV pF Ω
– – –
CT RF
Semiconductor Group
2
BAT 14-098
Forward current IF = f (VF)
Forward current IF = f (TS; TA*) *Package mounted on alumina
Reverse current IR = f (VR)
Diode capacitance CT = f (VR) f = 1 MHz
Semiconductor Group
3
BAT 14-098
S11-Parameters Typical impedance characteristics (with external bias I and Z0 =...