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PZTM1101 Dataheets PDF



Part Number PZTM1101
Manufacturers NXP
Logo NXP
Description NPN transistor/Schottky-diode module
Datasheet PZTM1101 DatasheetPZTM1101 Datasheet (PDF)

DISCRETE SEMICONDUCTORS DATA SHEET k, halfpage M3D087 PZTM1101 NPN transistor/Schottky-diode module Product specification 1996 May 09 Philips Semiconductors Product specification NPN transistor/Schottky-diode module FEATURES • Low output capacitance • Fast switching time • Integrated Schottky protection diode. handbook, halfpage PZTM1101 DESCRIPTION Combination of an NPN transistor and a Schottky barrier diode in a plastic SOT223 package. PNP complement: PZTM1102. 4 1 APPLICATIONS • Hig.

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DISCRETE SEMICONDUCTORS DATA SHEET k, halfpage M3D087 PZTM1101 NPN transistor/Schottky-diode module Product specification 1996 May 09 Philips Semiconductors Product specification NPN transistor/Schottky-diode module FEATURES • Low output capacitance • Fast switching time • Integrated Schottky protection diode. handbook, halfpage PZTM1101 DESCRIPTION Combination of an NPN transistor and a Schottky barrier diode in a plastic SOT223 package. PNP complement: PZTM1102. 4 1 APPLICATIONS • High-speed switching for industrial applications. 2 4 PINNING PIN 1 2 3 4 base emitter collector, cathode Schottky DESCRIPTION anode Schottky Marking code: TM1101. 1 Top view 2 3 MAM236 3 Fig.1 Simplified outline (SOT223) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL NPN transistor VCBO VCES VEBO IC VR IF IF(AV) Tj collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) open emitter VBE = 0 open collector − − − − − − − reverse current applied forward current applied Combined device Ptot Tamb Tstg Tj total power dissipation operating ambient temperature storage temperature junction temperature up to Tamb = 25 °C − −55 −55 − 1.2 +150 +150 150 W °C °C °C − − 60 40 6 200 V V V mA PARAMETER CONDITIONS MIN. MAX. UNIT Schottky barrier diode continuous reverse voltage forward current (DC) average forward current junction temperature 40 1 1 125 150 V A A °C °C 1996 May 09 2 Philips Semiconductors Product specification NPN transistor/Schottky-diode module ELECTRICAL CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL NPN transistor V(BR)CBO V(BR)CES V(BR)EBO ICES IEBO VCEsat collector-base breakdown voltage open emitter; IC = 10 µA; IE = 0; Tamb = −55 to +150 °C; note 1 60 40 6 − − − − − − − − − − − − − 300 40 70 100 30 60 15 PARAMETER CONDITIONS PZTM1101 MIN. MAX. − − − 100 50 50 10 200 300 250 350 850 950 1000 1100 4 8 − − − 300 − 500 − 5 31 310 100 UNIT V V V nA µA nA µA mV mV mV mV mV mV mV mV pF pF MHz collector-emitter breakdown voltage open base; IC = 1 mA; VBE = 0; Tamb = −55 to +150 °C; note 1 emitter-base breakdown voltage collector-emitter cut-off current emitter-base cut-off current collector-emitter saturation voltage open collector; IE = 10 µA; IC = 0; Tamb = −55 to +150 °C; note 1 VCE = 20 V; VBE = 0 VEB = 6 V; IC = 0 VEB = 6 V; IC = 0; Tamb = −55 to +150 °C note 1 IC = 10 mA; IB = 1 mA IC = 50 mA; IB = 3.2 mA VCE = 20 V; VBE = 0; Tamb = −55 to +150 °C − VCEsat collector-emitter saturation voltage Tamb = −55 to +150 °C; note 1 IC = 10 mA; IB = 1 mA IC = 50 mA; IB = 3.2 mA VBEsat base-emitter saturation voltage note 1 IC = 10 mA; IB = 1 mA IC = 50 mA; IB = 5 mA VBEsat base-emitter saturation voltage Tamb = −55 to +150 °C; note 1 IC = 10 mA; IB = 1 mA IC = 50 mA; IB = 5 mA Cob Cib fT hFE output capacitance input capacitance transition frequency DC current gain IE = ie = 0; VCB = 5 V; f = 1 MHz IC = ic = 0; VEB = 0.5 V; f = 1 MHz IC = 10 mA; VCE = 20 V; f = 100 MHz VCE = 1 V; note 1 IC = 0.1 mA IC = 1 mA IC = 10 mA IC = 100 mA hFE DC current gain VCE = 1 V; Tamb = −55 to +150 °C; note 1 IC = 10 mA IC = 100 mA SWITCHING TIMES (see Figs 2 and 3) td tr ts tf delay time rise time storage time fall time 3 VCC = 5 V IC = 50 mA Vi = 0 to 5 V 1 16 110 70 ns ns ns ns 1996 May 09 Philips Semiconductors Product specification NPN transistor/Schottky-diode module PZTM1101 SYMBOL PARAMETER CONDITIONS MIN. − − − − − − − − − MAX. UNIT Schottky barrier diode VF forward voltage IF = 100 mA; note 1 IF = 100 mA; Tamb = −55 to +150 °C; note 1 IF = 1 A; note 1 IF = 1 A; Tamb = −55 to +150 °C; note 1 IR reverse current VR = 40 V; note 1 VR = 40 V; Tj = 125 °C; Tamb = −55 to +150 °C; note 1 IR reverse current VR = 10 V; note 1 VR = 10 V; Tj = 125 °C; Tamb = −55 to +150 °C; note 1 Cj Notes 1. Measured under pulsed conditions: tp ≤ 300 µs; δ ≤ 0.01. 2. Limiting value for Tj = 125 °C; Tj = 150 °C with reverse current applied is not allowed as this may cause thermal runaway leading to thermal destruction of the diode. A peak junction temperature of Tj = 150 °C is only allowed with forward voltage applied. THERMAL CHARACTERISTICS SYMBOL Rth j-a Note 1. Refer to SOT223 standard mounting conditions. PARAMETER CONDITIONS VALUE 100 UNIT K/W junction capacitance VR = 0 V; f = 1 MHz 330 400 500 560 300 35(2) 40 15(2) 250 mV mV mV mV µA mA µA mA pF thermal resistance from junction to ambient (combined device) note 1 1996 May 09 4 Philips Semiconductors Product specification NPN transistor/Schottky-diode module GRAPHICAL DATA PZTM1101 handbook, halfpage handbook, halfpage 5V VCC = 5 V DC 90 Ω (1%) INPUT Vi tp Vo OUTPUT 90% td tr ton ts toff 10% tf MBH221 0V 5V 0V 825 Ω (1%) Vi 7.5 kΩ (5%) DUT Vo (pin 4) 10% 90% 5.23 Ω (1%) MBH220 tr < 5 ns (10% to 90%); tp = 1 µs; δ = 0.02; Zi = 50 Ω. ton = td + tr; toff = ts + tf. Fig.2 Switching times test circuit. Fig.3 Input and output waveforms. 1996.


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