PZTA93

PNP Silicon High-Voltage Transistors PZTA 92 PZTA 93 High breakdown voltage q Low collector-emitter saturation voltage q Complementary types: PZTA 42, PZTA 43 (NPN) q Type PZTA 92 PZTA 93 Marking PZTA 92 PZTA 93 Ordering Code (tape and reel) Q62702-Z2037 Q62702-Z2038 Pin Configuration 1 2 3 4 B C E C Package1) SOT-223 Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation, TS = 124 ˚C Junction temperature Storage temperature range Thermal Resistance Junction - ambient2) Junction - soldering point Rth JA Rth JS ≤ ≤ Symbol PZTA 92 VCE0 VCB0 VEB0 IC IB Ptot Tj Tstg 300 300 Values PZTA 93 200 200 5 500 100 1.5 150 Unit V mA W ˚C – 65 … + 150 72 17 K/W 1) 2) For detailed information see chapter Package Outlines. Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu. Semiconductor Group 1 5.91 PZTA 92 PZTA 93 Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Parameter Symbol min. DC characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 PZTA 92 PZTA 93 Collector-base breakdown voltage IC = 100 µA, IB = 0 PZTA 92 PZTA 93 Emitter-base breakdown voltage IE = 100 µA, IC = 0 Collector-base cutoff current VCB = 200 V VCB = 160 V VCB = 200 V, TA = 150 ˚C VCB = 160 V, TA = 150 ˚C Emitter-base cutoff current VEB = 3 V, IC = 0 DC current gain1) IC = 1 mA, VCE = 10 V IC = 10 mA, VCE = 10 V IC = 30 mA, VCE = 10 V Collector-emitter satur...